Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
Reads0
Chats0
TLDR
Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 813 citations till now. The article focuses on the topics: Subthreshold conduction & Overdrive voltage.read more
Citations
More filters
Journal ArticleDOI
A method to evaluate the location of the maximum value of a function with high level of noise
TL;DR: In this article, a new method that evaluates the location of the maximum value of a given function under the presence of high level of noise is presented, which decreases the effect of noise instead of increasing it.
Dissertation
Films de diamant monocristallin dopés au bore pour des applications en électronique de puissance
TL;DR: In this article, a traitement de gravure des defauts surfaciques des substrats de diamant HPHT par plasma Ar/O₂ a ete mis au point.
Proceedings ArticleDOI
Ab-initio study on FinFETs and their application in loT aided robotics
Sreeja Rajendran,R. Mary Lourde +1 more
TL;DR: In this paper, the authors discuss the usage of FinFETs in IoT controlled stepper motor drive circuits used in robotics linked to the Internet of Things (IoT), where the load switch connects and disconnects a specific load from the supply according to the signal from the control circuitry.
Dissertation
A Subthreshold Analysis of Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs
TL;DR: In this paper, an accurate analytical sub threshold models have been developed for an undoped tri-material cylindrical gate-all-around (TM-CGAA) MOSFET considering parabolic approximation of the channel.
Dissertation
Implementation of PCM (Process compact models) for the study and improvement of variability in advanced FD-SOI CMOS technologies
TL;DR: The idea to address the problem is to reduce the number of trials required to find the optimal manufacturing process and to combine TCAD tool and compact models in order to build and calibrate what is called PCM (Process Compact Model).
References
More filters
Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.
Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.