Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
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TLDR
Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 813 citations till now. The article focuses on the topics: Subthreshold conduction & Overdrive voltage.read more
Citations
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Proceedings ArticleDOI
Comparative study of Double Gate SOI FinFET and trigate Bulk MOSFET structures
TL;DR: In this paper, the impact of systematic variations on transistor performance is shown for the trigate bulk MOSFET and double gate SOI FinFET in terms of threshold voltage, subthreshold swing and drain induced barrier lowering (DIBL).
Journal ArticleDOI
A novel extraction method of device parameters for thin-film transistors (TFTs)
TL;DR: In this paper, a novel method of extracting device parameters has been presented for IGZO TFTs, which can accurately and quickly extract device parameters through the simple mathematical process for transfer curves.
Journal ArticleDOI
A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs
Juan Muci,Denise C Lugo Muñoz,Álvaro D Latorre Rey,Adelmo Ortiz-Conde,Francisco J. García-Sánchez,Ching-Sung Ho,Juin J. Liou,Juin J. Liou +7 more
TL;DR: In this paper, a new procedure is presented to separate and extract source-and-drain series resistance and mobility degradation factor parameters in MOSFET compact models, based on directly calculating the three parameters by solving a system of three simultaneous equations.
Proceedings ArticleDOI
Fast productive WLR characterisation methods of plasma induced damage of thin and thick MOS gate oxides
TL;DR: In this paper, a sensitive method for the testing of PID which is applicable to all oxide thicknesses and types of MOS transistors is presented, and the main goal of this work is to present a sensitivity method for PID testing.
Journal ArticleDOI
Spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs
TL;DR: In this article, an auxiliary sub-circuit for modeling the effects of oxide and interface trapped charges in Spice electrical models of fully-depleted double-gate FinFETs is proposed.
References
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Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.
Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.