Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
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TLDR
Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 813 citations till now. The article focuses on the topics: Subthreshold conduction & Overdrive voltage.read more
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Proceedings ArticleDOI
Generic Parameter Extraction of Inkjet-Printed OTFTs via Optimisation Using LTspice and MATLAB
TL;DR: Using LTspice, a freely available circuit simulation tool coupled with MATLAB, a routine has been prepared which performs parameter extraction for organic thin film transistors (OTFTs) measurement results across a family of curves via optimisation as discussed by the authors.
Proceedings ArticleDOI
Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification
Md. Shafayat Hossain,Saeed Uz Zaman Khan,Md. Obaidul Hossen,Fahim ur Rahman,Rifat Zaman,Quazi D. M. Khosru +5 more
TL;DR: In this paper, an analytical model of potential profile and threshold voltage for rectangular gate-all-around III-V nanowire MOSFET device with quantum correction is developed with experimental and ATLAS verification.
Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors
Bong-Ho Kim,Song-Hyeon Kuk,Seong Kwang Kim,Joon Pyo Kim,Yoon-Je Suh,Jae-Ok Jeong,Dae-Myeong Geum,Seung Hyub Baek,Sang Hyeon Kim +8 more
TL;DR: In this article , the authors demonstrated improved switching voltage and retention and endurance characteristics in HfZrOx (HZO)-based ferroelectric field effect transistors (FeFETs) via oxygen scavenging with Sc. Insertion of Sc into the gate stack successfully reduced the thickness of the interfacial SiOx layer (IL) between HZO and Si; thus, the FeFET with Sc could perform an immediate read-after-write at a 2-V pulse.
A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D)
TL;DR: In this paper, a threshold voltage model of short-channel recessed-source/drain (Re-S/D) ultrathin body (UTB) SOI MOSFETs has been presented considering the substrate induced surface potential (SISP).
References
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Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.
Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.