Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
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TLDR
Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 813 citations till now. The article focuses on the topics: Subthreshold conduction & Overdrive voltage.read more
Citations
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Proceedings ArticleDOI
Harmonic distortion in MOSFETs calculated by successive integration of the transfer characteristics
TL;DR: In this article, the harmonic distortion of experimental n-MOSFETs with different channel lengths has been studied from their measured transfer characteristics, using a recently proposed alternative mathematical procedure called?full successive integrals method? (FSIM).
Study of macroscopic and microscopic homogeneity of DEPFET X-ray detectors
TL;DR: In this paper, the results of the electrical and spectroscopic characterization of the DEPFET designs are reported, as well as guidelines for expanded testing in order to increase the general knowledge.
Journal ArticleDOI
A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric
Riu Gao,Zhigang Ji,Jian Fu Zhang,Weidong Zhang,Sharifah Wan Muhamad Hatta,James Niblock,Peter Bachmayr,Lee Stauffer,Katie Wright,Steve Greer +9 more
TL;DR: In this article, a discharge-based technique is introduced to extract positive charge energy distribution both within and beyond the substrate band gap in gate dielectric (GDE) for process qualification.
Dissertation
Power Characteristics of Selective Buried Oxide MOSFET
TL;DR: A Master of Science thesis in Electrical Engineering by Dana Tariq Younis entitled, "Power Characteristics of Selective Buried Oxide MOSFET," submitted in January 2016.
Proceedings ArticleDOI
Predicting Vt mean and variance from parallel Id measurement with model-fitting technique
Chih-Ying Tsai,Kao-Chi Lee,Chien-Hsueh Lin,Sung-Chu Yu,Wen-Rong Liau,Alex Hou,Ying-Yen Chen,Chun-Yi Kuo,Jih-Nung Lee,Mango C.-T. Chao +9 more
TL;DR: The proposed framework applies the model-based random forest as its core model-fitting technique to learn a model that can predict the mean and variance of Vt based on only the combined Id measured from parallel connected DUTs, to achieve 42.9X speedup in turn of the required iterations of Id measurement per DUT.
References
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Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.
Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.