Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
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TLDR
Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 813 citations till now. The article focuses on the topics: Subthreshold conduction & Overdrive voltage.read more
Citations
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Proceedings ArticleDOI
Threshold voltage extraction circuit for low voltage CMOS design using basic long-channel MOSFET
TL;DR: This work presents a simple circuit that extracts the threshold voltage under low voltage conditions and using a feedback loop in order to reach supply independence.
DC and RF characterization of NiSi Schottky barrier MOSFETs with dopant segregation
C. Urban,Siegfried Mantl +1 more
TL;DR: In this paper, the integration of NiSi with dopant segregation in SBMOSFETs on thin-body silicon-on-insulator (Si-On-Instrulator) is studied.
Journal ArticleDOI
Current Rerouting Improves Heat Removal in Few-Layer WSe2 Devices.
TL;DR: This tightly-integrated electro-thermal study shows that Joule heating leads to a significant layer-dependent temperature rise, which affects mobility and alters the flow of current through the stack, and discovers that this current rerouting phenomenon improves heat removal because the current flows through layers closer to the substrate, limiting the severity of self-heating and its impact on carrier mobility.
Journal ArticleDOI
Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor
TL;DR: In this paper, the effects of nanowire size on the current sensitivity of silicon ion-sensitive field-effect transistors (ISFETs) were investigated, and it was revealed that the sensitivity expressed as relative I on change improves as the width decreases.
Journal ArticleDOI
Ion implanted GaN MISFETs fabricated in Mg implanted layers activated by conventional rapid thermal annealing
Michitaka Yoshino,Kota Sugamata,Kiyoji Ikeda,Tomoaki Nishimura,Kazuo Kuriyama,Tohru Nakamura +5 more
TL;DR: In this article, a new activation annealing technology that can efficiently and uniformly heat the ion implanted transparent GaN substrates was developed, which can reduce the GaN substrate temperature by 80-50°C.
References
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Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.
Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.