Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
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TLDR
Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 813 citations till now. The article focuses on the topics: Subthreshold conduction & Overdrive voltage.read more
Citations
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Proceedings ArticleDOI
V th is dead - long live the threshold voltage
Theodor Hillebrand,Maike Taddiken,Konstantin Tscherkaschin,Steffen Paul,Dagmar Peters-Drolshagen +4 more
TL;DR: In this article, a comprehensive analysis of 12 different extraction methods for the threshold voltage V th is presented, accounting for the emerging needs of advanced technology nodes the methods are evaluated with TCAD simulations of FDSOI, Bulk and Fin MOSFET devices.
Deuterium in the gate dielectric of CMOS devices
TL;DR: In this paper, the authors proposed a method to reduce the thickness of the gate dielectric layer inside the MOSFET, which can lead to a non-functional transistor.
Journal ArticleDOI
Correlating the Density of Trap-States and the Field-Effect Performance in Metal-Oxide Thin-Film Transistors With High- $\kappa$ Gate Dielectrics via a Trap-Limited Conduction Method
Mochamad Januar,Chun-Wen Cheng,Wen-Kai Lin,Vito Vito,Meng-Chyi Wu,Shu-Tong Chang,Kou-Chen Liu +6 more
TL;DR: In this paper, a trap-limited conduction method was used to correlate the density of localized states with the performance of Sm2O3- and HfO2-gated metal-oxide thin-film transistors (TFTs) fabricated at room temperature.
Journal ArticleDOI
Highly Trustworthy In-Sensor Cryptography for Image Encryption and Authentication.
Bangjie Shao,Tianqing Wan,Fuyou Liao,Beom Jin Kim,Jiewei Chen,Sijie Ma,Jong Hyun Ahn,Yang Chai +7 more
TL;DR: In this paper , the authors developed in-sensor cryptography that enables capturing images and producing security keys in the same hardware devices, which gives rise to highly trustworthy cryptography, where the generated key inherently binds to the captured images.
Journal ArticleDOI
New Hybrid Generation of Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs
TL;DR: In this article , a comparative study by 3-D numerical simulations data and experimental data between the MOSFETs implemented with the Half-Diamond and Conventional layout styles is presented.
References
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Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.
Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.