Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
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TLDR
Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 813 citations till now. The article focuses on the topics: Subthreshold conduction & Overdrive voltage.read more
Citations
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Proceedings ArticleDOI
Reliability assessment of SiC power MOSFETs from the end user's perspective
TL;DR: In this article, the reliability of commercial silicon carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments.
Dissertation
Contribution à l'étude expérimentale des résistances d'accès dans les transistors de dimensions deca-nanométrique des technologies CMOS FD-SOI
TL;DR: In this paper, a methode d'extraction des composantes parasites resistives and capacitives is presented, where the transistors de longueurs proches are reduced.
Journal ArticleDOI
Integration-based approach to evaluate the sub-threshold slope of MOSFETs
TL;DR: The use of simple integration-based methods to extract the sub-threshold current slope factor of MOSFETs as an alternative to traditional extraction processes based on differentiating theSub-th threshold transfer characteristics is proposed.
Proceedings ArticleDOI
Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density
TL;DR: In this article, the threshold voltage in 2D Field Effect Transistors (FETs) has been extracted by a power-law dependence on the channel carrier density, i.e., V G -V T is proportional to the channel density as checked with V G-dependent Hall measurements in companion gated Hall devices.
Journal ArticleDOI
Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors
TL;DR: Ti interdiffusion from the Ti/Pt/Au gate into the AlGaAs Schottky barrier layer (SBL) of 0.25-μm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) has been studied using the accelerated life testing technique and it is suggested that the main cause for device failure is the growth of the TiAs phase leading to the decrease in the SBL thickness.
References
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Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.
Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.