Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
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TLDR
Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 813 citations till now. The article focuses on the topics: Subthreshold conduction & Overdrive voltage.read more
Citations
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Dissertation
Impact of Mechanical Stress on the Electrical Stability of Flexible a-Si TFTs
TL;DR: In this article, the effect of gate bias stress and elastic strain on the long-term stability of flexible low-temperature hydrogenated amorphous silicon (a-Si:H) TFTs was investigated.
Proceedings ArticleDOI
Investigation of scattering mechanisms for scaled mosfets
TL;DR: In this paper, the authors investigated the scattering mechanisms for MOSFETs with gate length varying from 1000 nm to 32 nm and found that the Coulombic scattering and surface roughness scattering increase with a decreasing effective mobility.
Journal ArticleDOI
High performance, low temperature processed Hf-In-Zn-O/HfO2 thin film transistors, using PMMA as etch-stop and passivation layer
TL;DR: In this article, a spin-coated polymethyl-methacrylate (PMMA) as passivation and etch-stop layer (ESL) was used for high performance, low operating voltage and low temperature processed Hf-In-Zn-O/HfO2 thin film transistors.
Journal ArticleDOI
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
Maria Glória Caño de Andrade,Maria Glória Caño de Andrade,Maria Glória Caño de Andrade,Joao Antonio Martino,Marc Aoulaiche,Nadine Collaert,Eddy Simoen,Cor Claeys +7 more
TL;DR: The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment.
DissertationDOI
Probing technique for energy distribution of positive charges in gate dielectrics and its application to lifetime prediction
TL;DR: In this article, the authors developed an energy profile technique for negative bias temperature instability (NBTI) prediction of pMOSFETs, which is applicable to both SiON and high-k/SiON stack.
References
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Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.
Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.