Journal ArticleDOI
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements
Matteo Meneghini,Isabella Rossetto,Davide Bisi,Antonio Stocco,Alessandro Chini,A. Pantellini,Claudio Lanzieri,Antonio Nanni,Gaudenzio Meneghesso,Enrico Zanoni +9 more
TLDR
In this paper, an extensive investigation of the trap with activation energy equal to 0.6 eV was performed on AlGaN/GaN HEMTs with increasing concentration of iron doping in the buffer.Abstract:
This paper presents an extensive investigation of the properties of the trap with activation energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse (CC) in AlGaN/GaN HEMTs. The study was carried out on AlGaN/GaN HEMTs with increasing concentration of iron doping in the buffer. Based on pulsed characterization and drain current transient measurements, we demonstrate that for the samples under investigation: 1) increasing concentrations of Fe-doping in the buffer may induce a strong CC, which is related to the existence of a trap level located 0.63 eV below the conduction band energy and 2) this trap is physically located in the buffer layer, and is not related to the iron atoms but—more likely—to an intrinsic defect whose concentration depends on buffer doping. Moreover, we demonstrate that this level can be filled both under OFF-state conditions (by gate-leakage current) and under ON-state operation (when hot electrons can be injected to the buffer): for these reasons, it can significantly affect the switching properties of AlGaN/GaN HEMTs.read more
Citations
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Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
Journal ArticleDOI
Stability and Reliability of Lateral GaN Power Field-Effect Transistors
Jesus A. del Alamo,Ethan Lee +1 more
TL;DR: This article reviews some of the most interesting and significant stability and reliability issues that have plagued GaN power field-effect transistors for RF and power management applications.
Journal ArticleDOI
Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
Olle Axelsson,Sebastian Gustafsson,Hans Hjelmgren,Niklas Rorsman,Hervé Blanck,Jorg Splettstoesser,Jim Thorpe,Thomas Roedle,Mattias Thorsell +8 more
TL;DR: In this paper, the impact of different buffer doping profiles on the trapping effects in microwave AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs) was investigated.
Journal ArticleDOI
Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer
Sebastian Gustafsson,Jr-Tai Chen,Johan Bergsten,Urban Forsberg,Mattias Thorsell,Erik Janzén,Niklas Rorsman +6 more
TL;DR: In this paper, three epitaxial structures have been fabricated on 4H-SiC using hot-wall metal-organic chemical vapor deposition with residual carbon doping, and the leakage currents in OFF-state at 10 V drain voltage were in the same order of magnitude ( $10^{-4}$ A/mm) for the high-doped and steppeddoped buffer.
Journal ArticleDOI
Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers
Johan Bergsten,Mattias Thorsell,David Adolph,Jr-Tai Chen,Olof Kordina,Einar Ö. Sveinbjörnsson,Niklas Rorsman +6 more
TL;DR: In this paper, carbon (C)-doped buffers were used to grow two C-doped structures with different doping profiles, using growth parameters to change the C incorporation, resulting in n-type GaN.
References
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Journal ArticleDOI
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
TL;DR: Examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing are described.
Journal ArticleDOI
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.
Journal ArticleDOI
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
TL;DR: In this paper, the authors investigated the breakdown (V/sub br/) enhancement potential of the field plate (FP) technique in the context of AlGaN/GaN power HEMTs.
Journal ArticleDOI
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Jungwoo Joh,J.A. del Alamo +1 more
TL;DR: In this paper, the authors present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements and identify several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.
Journal ArticleDOI
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
Davide Bisi,Matteo Meneghini,Carlo De Santi,Alessandro Chini,Michael Dammann,Peter Brückner,Michael Mikulla,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this paper, the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation.