Journal ArticleDOI
Double jeopardy in the nanoscale court [MOSFET modeling]
TLDR
In this paper, physics-based short-channel models of threshold voltage and subthreshold swing for undoped symmetric double-gate MOSFETs are presented, developed from analytical solutions of the two-dimensional Poisson equations in the channel region.Abstract:
Physics-based compact short-channel models of threshold voltage and subthreshold swing for undoped symmetric double-gate MOSFETs are presented, developed from analytical solutions of the two-dimensional Poisson equations in the channel region. These models accurately characterize the subthreshold and near-threshold regions of operation by appropriately including essential phenomena such as volume inversion and the dominance of mobile charges over fixed charges under threshold conditions. Explicit, analytical expressions are derived for a scale length, which results from an evanescent-mode analysis. These equations readily quantify the impact of silicon film thickness and gate oxide thickness on the minimum channel length and device characteristics and can be used as an efficient guideline for device designs. These newly developed models are exploited to make a comprehensive projection on the scaling limits of undoped double-gate MOSFETs. On the individual device level, model predictions indicate that the minimum channel length can be scaled beyond 10 nm for a turn-off behavior of S=100 mV/dec for a silicon film thickness below 5 nm and an electrical equivalent oxide thickness below 1 nm.read more
Citations
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Journal ArticleDOI
A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs
TL;DR: In this paper, the authors review the compact-modeling framework for undoped double-gate (DG) silicon-on-insulator (SOI) MOSFETs.
Journal ArticleDOI
Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs
Abstract: We describe a new drain current model for nanoscale undoped-body symmetric dual-gate MOSFETs based on a fully consistent physical description. The model consists on a single analytic equation that includes both drift and diffusion contributions. It is built on the basis of the potentials at the surface and at the center of the silicon film evaluated at the source and drain ends. The derivation is completely rigorous and is based on a procedure previously enunciated for long-channel bulk SOI MOSFETs. The expression is a continuous description valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation. The validity of the model has been ascertained by extensive comparison to exact numerical simulations. The results attest to the excellent accuracy of this formulation.
Journal ArticleDOI
Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom
TL;DR: In this paper, an exact analytical solution of the channel surface potential as an explicit function of the gate voltage for either n or p channel operation is presented, and an approximate but highly accurate analytical solution is continuously valid for all regions of operation.
Journal ArticleDOI
Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications
TL;DR: The analog and RF performance of a single halo double gate MOSFET implemented with dual-material gate (DMG) technology is investigated with 2D device simulator and this novel structure shows better immunity to short-channel effects like DIBL and improved analog andRF performance.
Journal ArticleDOI
Nanoscale metal?oxide?semiconductor field-effect transistors: scaling limits and opportunities
Qiang Chen,James D. Meindl +1 more
TL;DR: In this article, a short-channel model of subthreshold swing and threshold voltage for undoped symmetric double-gate (DG) MOSFETs, including quantum-mechanical and fringe-induced barrier-lowering effects, is presented.
References
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Journal ArticleDOI
Device scaling limits of Si MOSFETs and their application dependencies
TL;DR: The end result is that there is no single end point for scaling, but that instead there are many end points, each optimally adapted to its particular applications.
Journal ArticleDOI
Scaling the Si MOSFET: from bulk to SOI to bulk
R.-H. Yan,Abbas Ourmazd,K.F. Lee +2 more
TL;DR: In this article, the scaling of fully depleted SOI devices is considered and the concept of controlling horizontal leakage through vertical structures is highlighted, and several structural variations of conventional SOI structures are discussed in terms of a natural length scale to guide the design.
Journal ArticleDOI
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
TL;DR: The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion as discussed by the authors.
Journal ArticleDOI
Scaling theory for double-gate SOI MOSFET's
TL;DR: In this paper, a scaling theory for double-gate SOI MOSFETs is presented, which gives guidance for device design that maintains a sub-threshold factor for a given gate length.
Journal ArticleDOI
Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
TL;DR: In this paper, a 1D analytic solution for symmetric and asymmetric double-gate MOSFETs was derived by incorporating only the mobile charge term in Poisson's equation.