Journal ArticleDOI
Experimental observations of the thermal stability of high-k gate dielectric materials on silicon
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TLDR
In this paper, high-k dielectric materials including zirconium oxide and hafnium oxide produced by atomic layer deposition have been evaluated for thermal stability using analyses derived from X-ray diffraction (XRD), Xray reflectometry (XRR), medium energy ion spectroscopy, high resolution transmission electron microscopy (HRTEM), tunneling atomic force microscopy, scanning electron microscopes, Auger electron spectroscope and secondary ion mass spectrography.Abstract:
High-k dielectric materials including zirconium oxide and hafnium oxide produced by atomic layer deposition have been evaluated for thermal stability. As-deposited samples have been compared with rapid thermal annealed samples over a range of source/drain dopant activation temperatures consistent with conventional complimentary metal oxide semiconductor polysilicon gate processes. Results of this initial investigation are presented utilizing analyses derived from X-ray diffraction (XRD), X-ray reflectometry (XRR), medium energy ion spectroscopy, high resolution transmission electron microscopy (HRTEM), tunneling atomic force microscopy, scanning electron microscopy, Auger electron spectroscopy and secondary ion mass spectroscopy. Changes in interface and surface roughness, percent crystallinity and phase identification for each material as a function of anneal temperature have been determined by XRD, XRR and HRTEM. Finally, high-k wet etch issues are presented relative to subsequent titanium silicide blanket film resistivity values.read more
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Book ChapterDOI
Atomic layer deposition
Mikko Ritala,Markku Leskelä +1 more
TL;DR: The atomic layer deposition (ALD) method as discussed by the authors is a chemical gas phase thin film deposition method based on alternate saturative surface reactions, in which the source vapors are pulsed into the reactor alternately, one at a time, separated by purging or evacuation periods.
Journal ArticleDOI
High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems
Keisuke Kobayashi,Makina Yabashi,Yasutaka Takata,Takashi Tokushima,Shik Shin,Kenji Tamasaku,Daigo Miwa,Tetsuya Ishikawa,Hiroshi Nohira,Takeshi Hattori,Y. Sugita,Osamu Nakatsuka,Akira Sakai,Shigeaki Zaima +13 more
TL;DR: In this paper, high-resolution x-ray photoelectron spectroscopy (XPS) at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8.
Journal ArticleDOI
Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition
M.-Y. Ho,Hao Gong,Glen D. Wilk,B. W. Busch,Martin L. Green,Paul M. Voyles,David A. Muller,M. Bude,W.H. Lin,Alex See,M. E. Loomans,S. K. Lahiri,Petri Räisänen +12 more
TL;DR: In this article, the effects of annealing on the morphology and crystallization kinetics for the high-κ gate dielectric replacement candidate hafnium oxide (HfO2) were reported.
Journal ArticleDOI
High-κ dielectrics and advanced channel concepts for Si MOSFET
Mo Wu,Yahya Alivov,Hadis Morkoç +2 more
TL;DR: In this paper, a review of the technological issues associated with the likely high-κ materials which are under consideration as well as challenges, and solution to them, they bring about in the fabrication of Si MOSFETs are discussed.
Journal ArticleDOI
Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing
TL;DR: In this paper, X-ray reflectivity (XRR) data were fitted in order to evaluate the thickness, the surface roughness and the interface stability upon thermal processing between 300 and 1050 8C.
References
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Journal ArticleDOI
Thermodynamic stability of binary oxides in contact With silicon
K. J. Hubbard,Darrell G. Schlom +1 more
TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
Journal ArticleDOI
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
TL;DR: In this article, an accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitanceversus-voltage curves to quantum-mechanically simulated capacitance-versusvoltage results.
Journal ArticleDOI
High temperature stability in lanthanum and zirconia-based gate dielectrics
Jon Paul Maria,Dwi Wicaksana,Angus I. Kingon,B. W. Busch,H. Schulte,Eric Garfunkel,Torgny Gustafsson +6 more
TL;DR: In this article, a gate dielectric composed primarily of lanthana and zirconia was prepared by reactive evaporation and the stability of the layers during high temperature anneals was investigated.
Journal ArticleDOI
Challenges in Integrating the High-K Gate Dielectric Film to the Conventional Cmos Process Flow
Avinash Agarwal,Michael Freiler,Patrick S. Lysaght,Loyd Perrymore,Renate Bergmann,Chris M. Sparks,Bill Bowers,Joel Barnett,Deborah J. Riley,Y. Kim,Billy Nguyen,Gennadi Bersuker,Eric Shero,Jae E. Lim,Steven Lin,Jerry Chen,Robert W. Murto,Howard R. Huff +17 more
TL;DR: In this article, the integration of ALCVD deposited ZrO2 and HfO2 with an industry standard conventional MOSFET process flow with poly-Si electrode was investigated.
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