Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Journal ArticleDOI
Material Developments and Domain Wall-Based Nanosecond-Scale Switching Process in Perpendicularly Magnetized STT-MRAM Cells
Thibaut Devolder,Joo-Von Kim,Johan Swerts,Sebastien Couet,Siddharth Rao,W. Kim,Sofie Mertens,Gouri Sankar Kar,Vladimir Nikitin +8 more
TL;DR: In this article, the influence of boron content in MgO/FeCoB/Ta systems alloys on their Gilbert damping parameter after crystallization annealing was investigated.
Journal ArticleDOI
Modeling of Voltage-Controlled Spin–Orbit Torque MRAM for Multilevel Switching Application
TL;DR: In this paper, the modeling of voltage-controlled spin-orbit torque (VCSOT)-based magnetic random access memory (MRAM) is demonstrated, and two-bit serial MLC and parallel MLC (pMLC) designs are proposed using VCSOT MRAM.
Journal ArticleDOI
Interfacial Perpendicular Magnetic Anisotropy in Sub-20 nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory
Shouzhong Peng,Wang Kang,Mengxing Wang,Kaihua Cao,Xiaoxuan Zhao,Lezhi Wang,Yue Zhang,Youguang Zhang,Yan Zhou,Kang L. Wang,Weisheng Zhao +10 more
TL;DR: In this paper, the authors investigate the thermal stability and interfacial magnetic anisotropy (PMA) needed for STT-MRAM applications and provide guidelines for the design of sub-20 nm MTJ devices.
Journal ArticleDOI
Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer
Huadong Gan,Roger Klas Malmhall,Zihui Wang,Bing K. Yen,Jing Zhang,Xiaobin Wang,Yuchen Zhou,Xiaojie Hao,Dongha Jung,Kimihiro Satoh,Yiming Huai +10 more
TL;DR: In this paper, the authors proposed an innovative approach to solve the problem of high density spin transfer torque magnetoresistance random access memory by reducing the thickness and/or moment of the reference layer.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.