Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Reduced Exchange Interactions in Magnetic Tunnel Junction Free Layers with Insertion Layers
TL;DR: In this paper, the exchange constant of free layers incorporated in full magnetic tunnel junction layer stacks, specifically CoFeB free layers with W insertion layers, is determined by magnetization measurements in a broad temperature range.
Journal ArticleDOI
Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation
Daisuke Kobayashi,Daisuke Kobayashi,Kazuyuki Hirose,Kazuyuki Hirose,Takahiro Makino,Shinobu Onoda,Takeshi Ohshima,Shoji Ikeda,Hideo Sato,Eli Christopher I. Enobio,Tetsuo Endoh,Hideo Ohno +11 more
Journal ArticleDOI
High thermal stability and low Gilbert damping constant of CoFeB/MgO bilayer with perpendicular magnetic anisotropy by Al capping and rapid thermal annealing
Ding-Shuo Wang,Shu-Yu Lai,Tzu-Ying Lin,Cheng-Wei Chien,David Ellsworth,Liang-Wei Wang,Jung-Wei Liao,Lei Lu,Yung-Hung Wang,Mingzhong Wu,Chih-Huang Lai +10 more
TL;DR: In this article, the magnetic anisotropy of the CoFeB/MgO bilayer can be manipulated by adding an aluminum capping layer, leading to enhanced exchange stiffness and reduced damping.
Journal ArticleDOI
Spin-orbit torque switching of magnetic tunnel junctions for memory applications
TL;DR: In this article , the fundamental characteristics of spin-orbit torques (SOT) and their use to switch magnetic tunnel junction (MTJ) devices, the elementary unit of the magnetoresistive random access memory (MRAM), are discussed.
Journal ArticleDOI
Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures
TL;DR: In this article, the authors report the low-temperature nanosecond duration spin transfer switching characteristics of perpendicular magnetic tunnel junction (pMTJ) nanopillar devices and contrast them to their room temperature properties.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.