Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Journal ArticleDOI
Spintronics for Energy- Efficient Computing: An Overview and Outlook
TL;DR: An overview of existing technology and a roadmap of spintronic devices for future energy-efficient computing and its relevant integration architectures are given and spin-orbit torque (SOT) is introduced, a critical mechanism to realize low-power data manipulation in the next generation of MRAM.
Proceedings ArticleDOI
Co/Ni based p-MTJ stack for sub-20nm high density stand alone and high performance embedded memory application
TL;DR: In this paper, the inner synthetic anti-ferromagnetic (iSAF) pinned layer in combination with ultra-smooth bottom electrode (roughness 0.5 A) was yielded to vertically scaled 11nm thick Co/Ni p-MTJ stack with excellent magnetic properties.
Journal ArticleDOI
Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions
Léa Cuchet,B. Rodmacq,B. Rodmacq,Stéphane Auffret,Stéphane Auffret,Ricardo C. Sousa,Ricardo C. Sousa,I. L. Prejbeanu,I. L. Prejbeanu,Bernard Dieny,Bernard Dieny +10 more
TL;DR: It appears that a FeCoB/Ru/FeCoB synthetic storage layer sandwiched between MgO barriers can be made stable enough to actually be used as hard reference layer in single or double magnetic tunnel junctions, the storage layer being now a single soft Fe co-B layer.
Patent
Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
TL;DR: In this article, a magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species, and an amorphous region is proximate to the magnetic region.
Journal ArticleDOI
Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn2RuxGa
Kiril Borisov,Davide Betto,Yong Chang Lau,Yong Chang Lau,C. Fowley,Aleksandra Titova,Naganivetha Thiyagarajah,Gwenael Atcheson,Jürgen Lindner,Alina M. Deac,J. M. D. Coey,Plamen Stamenov,Karsten Rode +12 more
TL;DR: In this article, the spin-polarized compensated ferrimagnet, Mn2RuxGa, is integrated into MgO-based perpendicular magnetic tunnel junctions.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.