Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Journal ArticleDOI
The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures
TL;DR: In this article, the authors demonstrate the influence of the heavy metal Ta underlayer non-adjacent to the magnetic Co layer on the PMA and thermal stability in the Ta/Pt/Co-Pt heterostructures.
Patent
Magnetic memory cells and methods of formation
TL;DR: In this paper, the structure of a magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping, and methods of fabrication and semiconductor devices are also disclosed.
Journal ArticleDOI
Electric field effect on a double MgO CoFeB-based free layer
Jian Cheng Huang,Cheow Hin Sim,Vinayak Bharat Naik,Michael Tran,Sze Ter Lim,Aihong Huang,Qi Jia Yap,Guchang Han +7 more
TL;DR: In this paper, the authors studied the electric field (EF) effect on MgO/CoFeB/Ta/Co FeB/MgO free layers by varying the thickness of the top layer.
Journal ArticleDOI
Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy
Thibaut Devolder,Enlong Liu,Johan Swerts,Sebastien Couet,T. Lin,Sofie Mertens,Arnaud Furnemont,Gouri Sankar Kar,J. De Boeck +8 more
TL;DR: In this paper, the properties of composite free layers with perpendicular anisotropy were studied using broadband ferromagnetic resonance to follow the field dependence of acoustical and optical excitation of the composite free layer in both in-plane and out-of-plane applied fields.
Journal ArticleDOI
First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM
K. Nishioka,Sadahiko Miura,Hiroaki Honjo,H. Inoue,T. Watanabe,T. Nasuno,Hiroshi Naganuma,T. V. A. Nguyen,Y. Noguchi,M. Yasuhira,Shinji Ikeda,Tetsuo Endoh +11 more
TL;DR: In this article, a 25-nm quad CoFeB/MgO-interfaces perpendicular magnetic tunnel junction (quad-MTJ) with enough thermal stability was developed.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.