Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Journal ArticleDOI
[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications
Enlong Liu,J. Swerts,Sebastien Couet,Sofie Mertens,Yoann Tomczak,T. Lin,Valentina Spampinato,A. Franquet,S. Van Elshocht,Gouri Sankar Kar,Arnaud Furnemont,J. De Boeck +11 more
TL;DR: In this paper, a high tunnel magetoresistance (TMR) MgO-based magnetic tunnel junction stack with a hybrid free layer design made of a [Co/Ni] multilayer and CoFeB was presented.
Journal ArticleDOI
Giant Perpendicular Magnetic Anisotropy in Mo-Based Double-Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions
Houyi Cheng,Jingle Chen,Shouzhong Peng,Boyu Zhang,Zilu Wang,Daoqian Zhu,Kewen Shi,Sylvain Eimer,Xinran Wang,Zongxia Guo,Yong Xu,Danrong Xiong,Kaihua Cao,Weisheng Zhao +13 more
Journal ArticleDOI
Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer
Hiroaki Honjo,Shinji Ikeda,Hideo Sato,K. Nishioka,T. Watanabe,Sadahiko Miura,T. Nasuno,Y. Noguchi,M. Yasuhira,Takaho Tanigawa,Hiroki Koike,H. Inoue,Masakazu Muraguchi,Masaaki Niwa,Hideo Ohno,Tetsuo Endoh +15 more
TL;DR: In this paper, the effect of sputtering gas species (Ar, Kr, and Xe) for deposition of a W insertion layer in the CoFeB/W/CoFeB free layer on magnetic properties of the free layer and tunnel magnetoresistance (TMR) ratio was investigated.
Journal ArticleDOI
Spin-Torque Ferromagnetic Resonance in W / Co − Fe − B / W / Co − Fe − B / Mg O Stacks
Congli He,Congli He,Congli He,Guoqiang Yu,Cecile Grezes,Jiafeng Feng,Zhen Zhao,Zhen Zhao,Seyed Armin Razavi,Qiming Shao,Aryan Navabi,Xiang Li,Qing Lin He,Mengyin Li,Jia Zhang,Kin L. Wong,Dan Wei,Guangyu Zhang,Xiufeng Han,Pedram Khalili Amiri,Kang L. Wang +20 more
TL;DR: In this paper, the spin-torque FMR (ST-FMR) was used to efficiently excite the optical resonance mode, because the current-induced torque naturally does not act uniformly on the two ferromagnetic layers.
Patent
Memory cells, semiconductor devices, and methods of fabrication
TL;DR: In this paper, a magnetic cell includes magnetic, secondary oxide, and getter seed regions, and the depletion of the oxide material enables lower electrical resistance and low damping in the cell structure.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.