Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Pt thickness dependence of spin Hall effect switching of in-plane magnetized CoFeB free layers studied by differential planar Hall effect
TL;DR: In this article, the authors introduce a differential planar Hall effect method that enables the experimental study of spin orbit torque switching of in-plane magnetized free layers in a simple Hall bar device geometry.
Journal ArticleDOI
Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer
TL;DR: The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated in this article, where two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagnetic or a synthetic antifromagnetic FeCoB-based layer, with a critical thickness as large as 3.0 nm.
Journal ArticleDOI
Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance
Joao Sampaio,Alexey Vasilyevitch Khvalkovskiy,M. Kuteifan,M. Cubukcu,Dmytro Apalkov,Vitaliy Lomakin,Vicent Cros,Nicolas Reyren +7 more
TL;DR: In this paper, the authors investigated the impact of DMI on the magnetic cell performance, using micromagnetic simulations, and found that DMI strongly promotes non-uniform magnetization states and nonuniform switching modes of the magnetic layer.
Journal ArticleDOI
Picosecond optospintronic tunnel junctions
Luding Wang,Houyi Cheng,Pingzhi Li,Youri L. W. van Hees,Yang Liu,Kaihua Cao,Reinoud Lavrijsen,Xiaoyang Lin,B Bert Koopmans,Weisheng Zhao +9 more
TL;DR: In this paper , an all-optical perpendicular magnetic tunnel junction (MTJ) was demonstrated with laser-induced deterministic and efficient writing by an optical approach and electrical readout by tunnel magnetoresistance.
Journal ArticleDOI
Improvement of Thermal Tolerance of CoFeB–MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition
Hiroaki Honjo,Shoji Ikeda,Hideo Sato,Soshi Sato,T. Watanabe,Sadahiko Miura,T. Nasuno,Y. Noguchi,M. Yasuhira,Takaho Tanigawa,Hiroki Koike,Masakazu Muraguchi,Masaaki Niwa,Koki Ito,Hideo Ohno,Tetsuo Endoh +15 more
TL;DR: In this article, annealing temperature dependence of tunnel magnetoresistance (TMR) ratio and magnetic properties for perpendicular-anisotropy (CoFe) structures with various boron compositions X was investigated.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.