Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer
Hiroaki Honjo,Shoji Ikeda,Hiroki Sato,T. Watanebe,Sadahiko Miura,T. Nasuno,Y. Noguchi,M. Yasuhira,Takaho Tanigawa,Hiroki Koike,Masakazu Muraguchi,Masaaki Niwa,Koki Ito,Hideo Ohno,Tetsuo Endoh +14 more
TL;DR: In this paper, the authors investigated properties of perpendicular-anisotropy magnetic tunnel junctions (p-MTJ) with [Co/Pt]-multilayer based synthetic ferrimagnetic reference (SyF) layer at elevated annealing temperature Ta from 350°C to 400°C.
Journal ArticleDOI
The Influence of the Capping Layer on the Perpendicular Magnetic Anisotropy in Permalloy Thin Films
TL;DR: In this article, the authors show that a perpendicular magnetic anisotropy can be achieved in polycrystalline Ni80Fe20 films on MgO underlayers grown on thermally oxidized Si substrates.
Journal ArticleDOI
Robust Perpendicular Magnetic Anisotropy in MgO/Co2FeAl/MgO Stacks Induced by MgO over Layer and Annealing Temperature
Journal ArticleDOI
Top-Pinned STT-MRAM Devices With High Thermal Stability Hybrid Free Layers for High-Density Memory Applications
Enlong Liu,Johan Swerts,Adrien Vaysset,Y. Wu,Sebastien Couet,Sofie Mertens,Siddharth Rao,W. Kim,S. Van Elshocht,J. De Boeck,Gouri Sankar Kar +10 more
TL;DR: In this article, the electrical and magnetic properties of the hybrid free layer (HFL) design in devices with various critical dimensions (CD) were investigated, in which the [Co/Ni] multilayers in the HFL have only one Co/Ni bilayer on Pt seed.
Journal ArticleDOI
Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory
Xiang Li,Shy-Jay Lin,Mahendra Dc,Yu-Ching Liao,Chengyang Yao,Azad Naeemi,Wilman Tsai,Shan X. Wang +7 more
TL;DR: In this article, a 2T-1MTJ cell-level modeling framework for in-plane spin-orbit-torque magnetic random-access memory (SOT-MRAM) is presented.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.