Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
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Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction
TL;DR: In this article, a magnetic tunnel junction (MTJ) and methods for fabricating a MTJ are described, which includes a fixed layer (114) and a barrier layer (116) on the fixed layer.
Journal ArticleDOI
Contributions of Co and Fe orbitals to Perpendicular Magnetic Anisotropy of MgO/CoFeB Bilayers with Spin-Orbit-Torque-Related (Ta, W, IrMn, and Ti) Underlayers
Sang Hoon Kim,Seung-heon Chris Baek,Mio Ishibashi,Kihiro T. Yamada,Takuya Taniguchi,Takaya Okuno,Yoshinori Kotani,Tetsuya Nakamura,Kab-Jin Kim,Takahiro Moriyama,Byong-Guk Park,Teruo Ono +11 more
TL;DR: In this paper, the perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO bilayers in contact with W, Ta, IrMn and Ti was studied.
Journal ArticleDOI
Voltage-controlled magnetic tunnel junctions with synthetic ferromagnet free layer sandwiched by asymmetric double MgO barriers
Cecile Grezes,Xiang Li,Kin L. Wong,Farbod Ebrahimi,Pedram Khalili Amiri,Pedram Khalili Amiri,Kang L. Wang +6 more
Journal ArticleDOI
Enhancing the interfacial perpendicular magnetic anisotropy and tunnel magnetoresistance by inserting an ultrathin LiF layer at an Fe/MgO interface
Takayuki Nozaki,Tomohiro Nozaki,Tatsuya Yamamoto,Makoto Konoto,Atsushi Sugihara,Kay Yakushiji,Hitoshi Kubota,Akio Fukushima,Shinji Yuasa +8 more
TL;DR: Li et al. as mentioned in this paper proposed inserting an ultrathin LiF layer at the interface in an epitaxial Fe/MgO junction, which achieved a large intrinsic interface PMA energy, K i ,0 , of 2.8 mJ/m 2 .
Journal ArticleDOI
Spin-transfer torque switched magnetic tunnel junction for memory technologies
TL;DR: The spin-transfer torque switched magnetic tunnel junction (MTJ) is a memory element in modern magnetic random access memory (MRAM), a CMOS-integrated technology that is being developed by semiconductor manufacturers as discussed by the authors .
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.