Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Journal ArticleDOI
Large Perpendicular Magnetic Anisotropy and Tunneling Magnetoresistance in Thermally Stable Mo/FeNiB/MgO Magnetic Tunnel Junctions
Journal ArticleDOI
Perpendicular magnetic anisotropy in composite MgO/CoFeB/Ta/[Co/Pd]n structures
Valentin Garcia-Vazquez,Yao-Jen Chang,A. Canizo-Cabrera,A. Canizo-Cabrera,Abel Garzon-Roman,Te-Ho Wu +5 more
TL;DR: In this paper, the impact of a non-magnetic Ta spacer layer on the perpendicular magnetic anisotropy of composite magnetic structures constituted by ultra-thin Co/Pd multilayers (MLs) and MgO/CoFeB was studied.
Journal ArticleDOI
CRP: Conditional Replacement Policy for Reliability Enhancement of STT-MRAM Caches
TL;DR: An error-aware cache replacement policy, namely, conditional replacement policy (CRP), is proposed, to improve the reliability of STT-MRAM caches by decreasing the rate of both read disturbance and write failure.
Patent
Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
Gurtej S. Sandhu,Witold Kula +1 more
TL;DR: In this paper, a getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the SOP, reducing an oxygen concentration and an electrical resistance of the secondary SOP.
Journal ArticleDOI
Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact
Sadahiko Miura,Sadahiko Miura,Hiroaki Honjo,Hiroaki Honjo,Keizo Kinoshita,Keizo Kinoshita,K. Tokutome,Hiroaki Koike,Shoji Ikeda,Tetsuo Endoh,Hideo Ohno +10 more
TL;DR: In this paper, a polish-on-off-axis magnetic tunnel junction (MTJ) was constructed on four substrate geometries, i.e., directly on the bottom electrode contact, directly off the axis of the bottom electrodes contact, on the axis with a polished bottom electrode, and off-axis with a polishing bottom electrode.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.