Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Journal ArticleDOI
Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices
Yohei Shiokawa,Eiji Komura,Yugo Ishitani,Atsushi Tsumita,Keita Suda,Kosuke Hamanaka,Tomohiro Taniguchi,Tomoyuki Sasaki +7 more
TL;DR: In this paper, the external perpendicular-magnetic field dependence of the threshold write current density and the write current switching probability using two types of in-plane magnetization SOT-MR devices was measured.
Journal ArticleDOI
Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions
Butsurin Jinnai,Junta Igarashi,Kyota Watanabe,Eli Christopher I. Enobio,Eli Christopher I. Enobio,Shunsuke Fukami,Hideo Ohno +6 more
Abstract: A shape-anisotropy magnetic tunnel junction (MTJ) holds promise for its scaling into single-digit nanometers while possessing high data-retention capability. Understanding magnetization reversal mode is crucial to quantify the thermal stability factor Δ for data retention with high accuracy. Here, we study magnetization reversal mode in the shape-anisotropy MTJ with a 15-nm-thick CoFeB layer by evaluating Δ from two different methods: switching probability and retention time measurements. We find that magnetization reversal coherently proceeds in the 15-nm-thick and X/1X-nm-diameter cylindrical nanomagnet in the shape-anisotropy MTJs, in contrast to the conventional interfacial-anisotropy MTJs with a smaller thickness and larger diameter. The coherent magnetization reversal of the shape-anisotropy MTJ is also confirmed by astroid curve measurements. This study provides insight into the development of ultrasmall and high-reliability MTJ devices.
Proceedings ArticleDOI
Control of Interlayer Exchange Coupling and Its Impact on Spin–Torque Switching of Hybrid Free Layers With Perpendicular Magnetic Anisotropy
Enlong Liu,Adrien Vaysset,Johan Swerts,Thibaut Devolder,Sebastien Couet,Sofie Mertens,T. Lin,Sven Van Elshocht,Jo De Boeck,Gouri Sankar Kar +9 more
TL;DR: In this paper, both macrospin modeling and micromagnetic simulations are used to study the influence of interlayer exchange coupling (IEC) on the switching behavior of the HFL for different device sizes.
Journal ArticleDOI
Effect of insertion layer on electrode properties in magnetic tunnel junctions with a zero-moment half-metal
Aleksandra Titova,C. Fowley,Eugene Clifford,Yong Chang Lau,Kiril Borisov,Davide Betto,Gwenael Atcheson,René Hübner,Chi Xu,Plamen Stamenov,Michael Coey,Karsten Rode,Jürgen Lindner,Jürgen Fassbender,Jürgen Fassbender,Alina M. Deac +15 more
TL;DR: The study shows that fine engineering of the Mn2RuxGa/barrier interface to improve the TMR amplitude is feasible and compared to devices with a bare MRG/MgO interface.
Journal ArticleDOI
High temperature ferromagnetic resonance study on pMTJ stacks with diffusion barrier layers
Wai Cheung Law,Taiebeh Tahmasebi,Funan Tan,Tianli Jin,Weiliang Gan,R. R. Nistala,Xintong Zhu,Zhiqiang Mo,H. W. Teo,Chim Seng Seet,A. See,S. N. Piramanayagam,Wen Siang Lew +12 more
TL;DR: In this paper, Ru, Mo and W were used as an insertion layer between the second MgO and the top electrode in dual-MgO pMTJ stacks on the free layer magnetic properties from 25 °C to 260 °C.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.