Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
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Book ChapterDOI
Magnetic and ferroelectric memories
TL;DR: The state of the art in magnetic and ferroelectric memories and the perspectives of development considering recent advances in material design and novel functionalities are highlighted and an insight is given of how remaining and intrinsic imperfections can be leveraged for specific applications.
Journal ArticleDOI
Perpendicular magnetic anisotropy of a Ta/NiFeB/MgO system and its magnetic coupling with [Pt/Co] multilayers
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TL;DR: The perpendicular magnetic anisotropy (PMA) and crystalline structure of Ta/NiFeB/MgO stacks were investigated in this article, where the authors showed that when the stack is annealed, PMA is induced and the magnetic moment increases due to the crystallization of bcc NiFe from amorphous NiFeB. This structure is combined with [Pt/Co]6 multilayers to study the change in the magnetic coupling and PMA behavior with the change of the Ta thickness inserted in-between and the annealing
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L-shaped electrode design for high-density spin–orbit torque magnetic random access memory with perpendicular shape anisotropy
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Journal ArticleDOI
Perpendicular Magnetic Anisotropy Electric Field Modulation in Magnetron-Sputtered Pt/Co/X/MgO Ultrathin Structures With Chemically Tailored Top Interface
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TL;DR: In this paper, a voltage-controlled perpendicular magnetic anisotropy modulation effect is found to be asymmetric with respect to the electric field polarity, in qualitative agreement with theoretical predictions.
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Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers
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References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.