Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
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Patent
Semiconductor devices with magnetic regions and attracter material and methods of fabrication
TL;DR: In this paper, an attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusable species and at least another species of the magnetic material.
Journal ArticleDOI
3ω correction method for eliminating resistance measurement error due to Joule heating
Benny Guralnik,Ole Hansen,Henrik Hartmann Henrichsen,Braulio Beltrán-Pitarch,Frederik Westergaard Østerberg,Lior Shiv,Thomas A. Marangoni,Andreas R. Stilling-Andersen,Alberto Cagliani,Mikkel Fougt Hansen,Peter Folmer Nielsen,Herman Oprins,Bjorn Vermeersch,Christoph Adelmann,Shibesh Dutta,Kasper A. Borup,Besira M. Mihiretie,Dirch Hjorth Petersen +17 more
TL;DR: In this paper, the authors demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance, which is used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.
Posted Content
Spintronic nano-devices for bio-inspired computing.
TL;DR: This article shows how spintronics can be used for bio-inspired computing, and reviews the different approaches that have been proposed, the recent advances in this direction, and the challenges towards fully integrated spintronic-CMOS (Complementary metal - oxide - semiconductor) bio- inspired hardware.
Journal ArticleDOI
Tuning Damping and Magnetic Anisotropy in Ultrathin Boron-Engineered MgO/Co–Fe–B/MgO Heterostructures
James Lourembam,Khoong Hong Khoo,Jinjun Qiu,Huiqing Xie,Seng Kai Wong,Qi Jia Yap,Sze Ter Lim +6 more
Journal ArticleDOI
Influence of a composite free layer structure on thermal stability of perpendicular magnetic tunnel junction
TL;DR: In this paper, magnetic anisotropy and tunneling magnetoresistance (TMR) were determined as functions of ferromagnetic (CoFeB) and capping (MgO) layer thicknesses.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.