Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Journal ArticleDOI
Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs
Hiroki Sato,Shoji Ikeda,Shunsuke Fukami,Hiroaki Honjo,S. Ishikawa,Michihiko Yamanouchi,K. Mizunuma,Fumihiro Matsukura,Hideo Ohno +8 more
TL;DR: In this paper, the authors investigated properties of Co/Pt multilayer for reference layer in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis.
Journal ArticleDOI
Disruptive effect of Dzyaloshinskii-Moriya interaction on the magnetic memory cell performance
Joao Sampaio,Alexey Vasilyevitch Khvalkovskiy,Alexey Vasilyevitch Khvalkovskiy,M. Kuteifan,M. Cubukcu,Dmytro Apalkov,Vitaliy Lomakin,Vincent Cros,Nicolas Reyren +8 more
TL;DR: In this paper, the authors investigated the impact of DMI on the magnetic cell performance, using micromagnetic simulations, and found that DMI strongly promotes non-uniform magnetization states and nonuniform switching modes of the magnetic layer.
Journal ArticleDOI
High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory
Jodi Iwata-Harms,Guenole Jan,Huanlong Liu,Santiago Serrano-Guisan,Jian Zhu,Luc Thomas,Ru-Ying Tong,Vignesh Sundar,Po-Kang Wang +8 more
TL;DR: CoFeB free layers diluted with state-of-the-art non-magnetic metallic impurities are reported on, demonstrating that the magnetization is the primary factor driving the temperature dependence of the anisotropy and thermal stability of STT-MRAM devices.
Journal ArticleDOI
Materials for spin-transfer-torque magnetoresistive random-access memory
TL;DR: In this article, the physics and materials science of magnetic tunnel junctions for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) is reviewed.
Journal ArticleDOI
From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review
TL;DR: The article concludes with the challenges and future prospects of hybrid CMOS/MTJ circuits, which will motivate people in academia to cultivate research in this domain and industry to realize the prototype for a wide range of potential applications.
References
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals.
TL;DR: The exchange-coupling strength is found to increase systematically from the 5d to 4d to 3d metals and exponentially with increasing number of d electrons along each period.