Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
TLDR
In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.Abstract:
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.read more
Citations
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Journal ArticleDOI
Spintronics based random access memory: a review
Sabpreet Bhatti,Rachid Sbiaa,Atsufumi Hirohata,Hideo Ohno,Shunsuke Fukami,S. N. Piramanayagam +5 more
TL;DR: This article reviews spintronics based memories, in particular, magnetic random access memory (MRAM) in a systematic manner and discusses some of the future technologies that might help the industry to move beyond the conventional MRAM technology.
Patent
Magnetoresistive element and magnetic memory
Tadaomi Daibou,Junichi Ito,Tadashi Kai,Minoru Amano,H. Yoda,Terunobu Miyazaki,Shigemi Mizukami,K. Ando,Kay Yakushiji,Shinji Yuasa,Hitoshi Kubota,Akio Fukushima,Taro Nagahama,Takahide Kubota +13 more
TL;DR: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second nonmagnetic layer placed between the first and the second magnetoresists; and a second interfacial magnetic layer between the second and the nonmagians as mentioned in this paper.
Journal ArticleDOI
Spintronic Nanodevices for Bioinspired Computing
TL;DR: This paper shows how spintronics can be used for bioinspired computing, and reviews the different approaches that have been proposed, the recent advances in this direction, and the challenges toward fully integrated spintronic complementary metal-oxide-semiconductor (CMOS) bioinspired hardware.
Journal ArticleDOI
Magnetoresistive Random Access Memory
TL;DR: A review of the developments in MRAM technology over the past 20 years is presented with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention.
Journal ArticleDOI
A comprehensive review on emerging artificial neuromorphic devices
TL;DR: A comprehensive review on emerging artificial neuromorphic devices and their applications is offered, showing that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry.
References
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Journal ArticleDOI
Demonstration of Ultralow Bit Error Rates for Spin-Torque Magnetic Random-Access Memory With Perpendicular Magnetic Anisotropy
Janusz J. Nowak,R. P. Robertazzi,Jonathan Z. Sun,Guohan Hu,D. W. Abraham,P. L. Trouilloud,Stephen L. Brown,Michael C. Gaidis,Eugene J. O'Sullivan,William J. Gallagher,Daniel C. Worledge +10 more
TL;DR: In this article, bit error rates below 10-11 are reported for a 4-kb magnetic random access memory chip, which utilizes spin transfer torque writing on magnetic tunnel junctions with perpendicular magnetic anisotropy.
Journal ArticleDOI
Sizable room-temperature magnetoresistance in cobalt based magnetic tunnel junctions with out-of-plane anisotropy
Baptiste Carvello,Clarisse Ducruet,Bernard Rodmacq,Stéphane Auffret,Eric Gautier,Gilles Gaudin,Bernard Dieny +6 more
TL;DR: In this article, a submicron alumina-based magnetic tunnel junctions (MTJ) using electrodes with out-of-plane magnetic anisotropy was prepared and characterized.
Journal ArticleDOI
Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures
TL;DR: In this paper, the microstructure and local chemistry of Ta/Ru/Ta/CoFeB/MgO/MnO/Co FeB/Ta-Ru magnetic tunnel junctions with different values of tunneling magnetoresistance (TMR) was investigated.
Journal ArticleDOI
Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage
TL;DR: In this paper, single and double barrier magnetic tunnel junctions were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering with Co40Fe40B20 ferromagnetic electrodes.
Journal ArticleDOI
Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions
Huadong Gan,Shoji Ikeda,W. Shiga,Jun Hayakawa,Katsuya Miura,H. Yamamoto,H. Hasegawa,Fumihiro Matsukura,Tadakatsu Ohkubo,Kazuhiro Hono,Hideo Ohno +10 more
TL;DR: In this paper, double MgO barrier magnetic tunnel junctions (MTJ) with 3-nm-thick Co40Fe40B20 free layer were fabricated and annealed at 350°C.