Journal ArticleDOI
Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application
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TLDR
In this article, the resistance switching characteristics of polycrystalline Nb/sub 2/O/sub 5/ film prepared by pulsed-laser deposition (PLD) were investigated for nonvolatile memory application.Abstract:
The resistance switching characteristics of polycrystalline Nb/sub 2/O/sub 5/ film prepared by pulsed-laser deposition (PLD) were investigated for nonvolatile memory application. Reversible resistance-switching behavior from a high resistance state to a lower state was observed by voltage stress with current compliance. The reproducible resistance-switching cycles were observed and the resistance ratio was as high as 50-100 times. The resistance switching was observed under voltage pulse as short as 10 ns. The estimated retention lifetime at 85/spl deg/C was sufficiently longer than ten years. Considering its excellent electrical and reliability characteristics, Nb/sub 2/O/sub 5/ shows strong promise for future nonvolatile memory applications.read more
Citations
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Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
Journal ArticleDOI
Emerging memories: resistive switching mechanisms and current status.
Doo Seok Jeong,Reji Thomas,Ram S. Katiyar,James F. Scott,Hermann Kohlstedt,A. Petraru,Cheol Seong Hwang +6 more
TL;DR: The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.
Journal ArticleDOI
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
TL;DR: TiO(2) and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with and appear to offer a basis for the understanding of other RS mechanisms which were originally considered to be irrelevant to the localized events.
Journal ArticleDOI
Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$
TL;DR: In this paper, the authors describe the characteristics of W-(Cu/SiO2)-Cu programmable metallization cell (PMC) devices formed by the thermal diffusion of Cu into deposited SiO2.
References
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Journal ArticleDOI
Reproducible switching effect in thin oxide films for memory applications
TL;DR: In this article, it was shown that positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns.
Journal ArticleDOI
Electrical phenomena in amorphous oxide films
TL;DR: In this article, a review of the observed properties of metal-insulator-metal devices involving such insulating layers, and the mechanisms which have been proposed for their operation are discussed.
Journal ArticleDOI
Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
TL;DR: In this article, the vertical transport properties of epitaxial layered structures composed of Pr0.7Ca0.3MnO3(PCMO) sandwiched between SrRuO3 (SRO) bottom electrode and several kinds of top electrodes such as SRO, Pt, Au, Ag, and Ti are characterized.
Journal ArticleDOI
Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ interface
TL;DR: In this article, the vertical transport properties of epitaxial layered structures composed of Pr$0.7}$Ca$ 0.3}$MnO$ 3}$ (PCMO) sandwiched between SRO bottom electrode and several kinds of top electrodes such as SRO, Pt, Au, Ag, and Ti were characterized.
Journal ArticleDOI
Switching properties of thin Nio films
J.F. Gibbons,W.E. Beadle +1 more
TL;DR: In this paper, the authors describe a two-terminal solid-state switch made from a thin film of nickel oxide, which has a typical OFF resistance of 10−20 MΩ and a typical ON resistance of 100−200 Ω.