Journal ArticleDOI
Strip detector design for ATLAS and HERA-B using two-dimensional device simulation
TLDR
In this paper, the authors investigated the blocking implant and spray implant techniques as promising candidates for the n-side isolation of irradiated detectors and evaluated the boundary condition of the free oxide regions between the strips.Abstract:
Irradiation scenarios were simulated in order to evaluate different technology and design options for silicon strip detectors exposed to a high luminosity environment. Two-dimensional process and device simulations were performed to get an insight into the device behaviour. The boundary condition of the free oxide regions between the strips was evaluated thoroughly to obtain correct field distributions. Using these results the formation of electron accumulation layers on the surface of the p-side and the depletion voltage dependence on the strip geometry can be explained. We investigated the “blocking implant” and the “spray implant” techniques as promising candidates for the n-side isolation of irradiated detectors. The main drawback of the “blocking implanted” devices is the increase of the electric field with increasing oxide charges. This implies the danger of impact ionization in irradiated devices. A “spray implanted” isolation layer leads to the highest electric field in the non-irradiated state which has the advantage of a better testability. Small gaps between strips as used in charge division readout reduce electric fields and leakage currents.read more
Citations
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Journal ArticleDOI
ATLAS pixel detector electronics and sensors
Georges Aad,M. Ackers,F. Alberti,M. Aleppo,Gianluca Alimonti,Jorge Alonso,E C Anderssen,A. Andreani,A. Andreazza,J-F. Arguin,K. E. Arms,Dario Barberis,Marco Barbero,M. Bazalova,R. Beccherle,K. H. Becks,Prafulla Kumar Behera,F. Bellina,J. Beringer,K. Bernardet,J. Biesiada,L. Blanquart,J. Boek,G. Boyd,P. Breugnon,Peter Buchholz,B. Butler,Massimo Caccia,A C Capsoni,C. Caso,D. Cauz,M Cepeda,R Cereseto,M. Cervetto,M. L. Chu,M. Citterio,J. C. Clemens,Yann Coadou,Marina Cobal,A. Coccaro,Simone Coelli,S. Correard,Markus Cristinziani,S. Cuneo,S. D'Auria,M. Dameri,Giovanni Darbo,S Dardin,B. De Lotto,U. De Sanctis,J. B. De Vivie De Regie,C. Del Papa,P. Delpierre,B. Di Girolamo,W. Dietsche,Fares Djama,Daniel Dobos,Mauro Donegà,Jens Dopke,Kevin Einsweiler,A. Eyring,D. Fasching,Lorenzo Feligioni,D.P.S. Ferguson,W. Fernando,Peter Fischer,M. J. Fisher,Tobias Flick,Guido Gagliardi,E. Galyaev,K. K. Gan,M Garcia-Sciveres,Nicoletta Garelli,G G Gariano,G. Gaycken,Claudia Gemme,P. Gerlach,M. G. D. Gilchriese,MarioPaolo Giordani,Danilo Giugni,K. W. Glitza,Claus Gössling,Tobias Golling,F Goozen,I. V. Gorelov,G. Gorfine,C. Grah,Heather Gray,I. M. Gregor,Joern Grosse-Knetter,K. Grybel,Phillip Gutierrez,Gregory David Hallewell,N. Hartman,Miroslav Havranek,Beate Heinemann,T. Henß,Martin Hoeferkamp,Dirk L. Hoffmann,M. Holder,W. Honerbach,C. Horn,S. R. Hou,G. S. Huang,Fabian Huegging,Elliot Hughes,Iskander Ibragimov,I Ilyashenko,M. Imhaeuser,J. M. Izen,J. Jackson,Dilip Jana,R. C. Jared,P. Jez,T.A. Johnson,J. Joseph,Harris Kagan,M. Karagounis,R. D. Kass,M Keil,Susanne Kersten,P. Kind,J. Klaiber-Lodewigs,Lasse Klingbeil,Reiner Klingenberg,Andreas Korn,Vadim Kostyukhin,I Kostyukhina,O. Krasel,Hans Krüger,K Krueger,J. Kudlaty,T Kuhl,O. Kvasnicka,Kerstin Lantzsch,T. Lari,S. Latorre,Shih-Chang Lee,Teresa Lenz,G. Lenzen,J. Lepidis,Jessica Levêque,M. Leyton,D. Lopez Mateos,K. F. Loureiro,D Lüke,L. Luisa,J. Lys,R. J. Madaras,P. Mättig,F M Manca,E. Mandelli,Michal Marcisovsky,Zach Marshall,German Martinez,Lucia Masetti,Martin Maß,M. Mathes,R McKay,G. Meddeler,R. Meera-Lebbai,Chiara Meroni,Jessica Metcalfe,W. T. Meyer,David Miller,Warner A. Miller,S. Montesano,Martin M. Monti,P. Morettini,Josh Moss,T Mouthuy,Polina Nechaeva,W. Ockenfels,G. A. Odino,M. Olcese,Bianca Osculati,Fabrizio Parodi,A Pekedis,K. Perez,Ivan Peric,C Pizzorno,J Popule,R Post,Francesco Ragusa,A. M. Rahimi,B. Raith,S. Rajek,Kendall Reeves,I. Reisinger,J. Richardson,E. I. Rosenberg,Leonardo Paolo Rossi,I. Rottländer,A. Rovani,Alexandre Rozanov,O. Runolfsson,E. Ruscino,A F Saavedra,F. Sabatini,M. Saleem,S. Sandvoss,B. Sanny,L. Santi,M I Scherzer,Carlo Schiavi,A. Schreiner,J. Schultes,Ariel Schwartzman,R Seibert,Sally Seidel,Horst Severini,S Shanava,Petr Sicho,P. Skubic,A C Smith,D.S. Smith,J. Snow,T. Stahl,T. Stockmanns,Sara Strandberg,Michael A. Strauss,Duc Ta,F. Tegenfeldt,P. K. Teng,R. Ter-Antonyan,J. Thadome,T. Tic,L. Tomášek,M Tomasek,F Tomasi,Konstantin Toms,C Tran,J. Treis,N. Triplett,Clara Troncon,Laurent Vacavant,S. Vahsen,Jan Valenta,G. Vegni,F. Vernocchi,E. Vigeolas,J. Virzi,E Viscione,Vaclav Vrba,J. Walbersloh,Wolfgang Walkowiak,J. Weber,T F Weber,Jens Weingarten,C Weldon,N. Wermes,Ulrich Werthenbach,J S Wirth,R. Witharm,B.H. Witt,M. Wittgen,J. Wuestenfeld,R. Wunstorf,J Wyckoff,W-M. Yao,C. Young,Remi Zaidan,M. Zdrazil,F. Zetti,J. Zhong,M. Ziolkowski,G. Zizka,M. M. Zoeller +267 more
TL;DR: In this article, the silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized and detailed descriptions of the pixel detector electronics and the silicon sensors are given.
Journal ArticleDOI
The ATLAS silicon pixel sensors
M.S Alam,Alessandra Ciocio,Kevin Einsweiler,J. Emes,Murdock Gilchriese,A. Joshi,S. Kleinfelder,R. Marchesini,F McCormack,O. Milgrome,N. Palaio,F Pengg,J. Richardson,G. Zizka,M. Ackers,A Andreazza,G. Comes,Peter Fischer,M Keil,V Klasen,T Kuhl,S. Meuser,W. Ockenfels,B. Raith,J. Treis,Norbert Wermes,Claus Gößling,F. Hügging,J. Wüstenfeld,R. Wunstorf,Dario Barberis,R. Beccherle,Giovanni Darbo,Guido Gagliardi,Claudia Gemme,P. Morettini,P. Musico,B. Osculati,F. Parodi,Leonardo Paolo Rossi,L. Blanquart,P. Breugnon,David Calvet,J. C. Clemens,P A. Delpierre,Gregory David Hallewell,D Laugier,T. Mouthuy,Alexandre Rozanov,I. Valin,M. Aleppo,Massimo Caccia,Francesco Ragusa,C Troncon,G. Lutz,Robert Richter,T. Rohe,A. Brandl,Grant Gorfine,Martin Hoeferkamp,Sally Seidel,G. Boyd,P. Skubic,Petr Sicho,L Tomasek,Vaclav Vrba,M. Holder,Michael Ziolkowski,Saverio D'Auria,C. Del Papa,E. Charles,D. Fasching,K. H. Becks,G. Lenzen,C. Linder +74 more
TL;DR: In this article, prototype sensors for the ATLAS silicon pixel detector have been developed, guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering.
Journal ArticleDOI
Evaluation of Energy Loss and Charge Sharing in Cadmium Telluride Detectors for Photon-Counting Computed Tomography
TL;DR: In this article, the authors present estimates of energy loss and charge sharing for a pixelated cadmium telluride (CdTe) detector used for photon-counting spectral computed tomography (CT).
Journal ArticleDOI
Radiation hardness of silicon detectors: current status
TL;DR: A general overview of the current progress of the radiation hardness studies towards these goals is given in this article, where the two main objectives of these studies are: (1) predict the radiation induced change in the detector parameters expected for any application, and (2) improve the radiation-hardness of the detectors.
Journal ArticleDOI
Design and performance of the silicon sensors for the CMS barrel pixel detector
Y. Allkofer,Claude Amsler,Daniela Bortoletto,V. Chiochia,L. Cremaldi,S. Cucciarelli,A. Dorokhov,A. Dorokhov,Ch. Hörmann,Ch. Hörmann,Roland Horisberger,Dai-Sik Kim,M. Konecki,Danek Kotlinski,Kirill Prokofiev,Kirill Prokofiev,C. Regenfus,T. Rohe,D.A. Sanders,S. Son,M. Swartz,T. Speer +21 more
TL;DR: In this paper, the authors describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices on the H2 beam line of the CERN-SPS.
References
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TL;DR: The Planar Technology of Semiconductor Surfaces is described in this article, where it is shown that the planar planar technology can be used to model the surface effects on p-n junction transistors.
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TL;DR: In this article, the current models for bulk damage in high resistivity silicon have been reviewed and the damage constants were obtained from a global data survey, on this basis the degradation of the silicon counters in the ATLAS Inner Detector during a 10-year LHC operation is forecasted.
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