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Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation

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TLDR
In this article, the constitutive relation of graphene and probe the physics of its optical phonons by studying its Raman spectrum as a function of uniaxial strain was uncovered.
Abstract
We uncover the constitutive relation of graphene and probe the physics of its optical phonons by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E(2g) optical mode splits in two components: one polarized along the strain and the other perpendicular. This splits the G peak into two bands, which we call G(+) and G(-), by analogy with the effect of curvature on the nanotube G peak. Both peaks redshift with increasing strain and their splitting increases, in excellent agreement with first-principles calculations. Their relative intensities are found to depend on light polarization, which provides a useful tool to probe the graphene crystallographic orientation with respect to the strain. The 2D and 2D(') bands also redshift but do not split for small strains. We study the Gruneisen parameters for the phonons responsible for the G, D, and D(') peaks. These can be used to measure the amount of uniaxial or biaxial strain, providing a fundamental tool for nanoelectronics, where strain monitoring is of paramount importance.

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Citations
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Journal ArticleDOI

Phonon Bandgap Engineering of Strained Monolayer MoS2

TL;DR: The uniaxial tension is illustrated as an efficient method for manipulating the phonon bandgap of the monolayer MoS₂, while the biaXial compression is used as a powerful tool to intrigue buckling in the monoledouble.
Journal Article

Probing the uniaxial strains in MoS$_{\mathrm{2}}$ using polarized Raman spectroscopy: A first-principles study

TL;DR: In this paper, the effects of uniaxial strain on the Raman-active modes in monolayer polysilicon was studied and it was shown that the in-plane and out-of-plane Raman spectra can serve as fingerprints for the uniaoXial strain in this 2D material.
Journal ArticleDOI

Perfect valley filter in strained graphene with single barrier region

TL;DR: In this article, a single barrier system was proposed to generate pure valley-polarized current in monolayer graphene, where a uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at the regions boundaries.
Dissertation

Estrategias de funcionalización de grafeno para el desarrollo de nanocompuestos de matriz termoplástica

TL;DR: In this paper, the authors investigate the desarrollo of nanocompuestos polimericos multifuncionales basados in grafeno, with potencial aplicacion in sectores como el de la automocion and el aeronautico.
References
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Raman spectroscopy as a versatile tool for studying the properties of graphene

TL;DR: The state of the art, future directions and open questions in Raman spectroscopy of graphene are reviewed, and essential physical processes whose importance has only recently been recognized are described.
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TL;DR: Graphene and its derivatives are being studied in nearly every field of science and engineering as mentioned in this paper, and recent progress has shown that the graphene-based materials can have a profound impact on electronic and optoelectronic devices, chemical sensors, nanocomposites and energy storage.
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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Andrea C. Ferrari, +68 more
- 04 Mar 2015 - 
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
Journal ArticleDOI

Quantifying defects in graphene via Raman spectroscopy at different excitation energies

TL;DR: It is found that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy, and a simple equation for the determination of the point defect density in graphene via Raman spectroscopy is presented.
Journal ArticleDOI

Stretching and Breaking of Ultrathin MoS2

TL;DR: In this paper, the stiffness and breaking strength of monolayer MoS2, a new semiconducting analogue of graphene, was investigated. But the results were limited to the case of single and bilayer membranes, and the strength of strongest membranes was only 11% of its Young's modulus.
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