Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
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Journal ArticleDOI
Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures
TL;DR: In this paper , the authors investigated the properties of type-II InGaN/GaNSb/GaN quantum-well (QW) structures by using the multiband effective mass theory for potential applications in red light-emitting diodes.
Proceedings ArticleDOI
Nitride Band-Structure Model in a Quantum Well Laser Simulator
TL;DR: In this paper, the effects of strain on bulk and quantum well band structures are analyzed using the two-dimensional quantum well laser simulator VLS (visible laser simulator) and the six band k.p solver used to calculate the electronic band structure.
Proceedings ArticleDOI
Simulation of InGaN Multiple Quantum Wells (MQWs) Light Emitting Diodes (LEDs)
TL;DR: In this paper, the authors simulated InGaN LEDs on sapphire substrates using ISE TCAD software and found that the weak output power resulting from their simulation may be related to the inhomogeneous holes distribution in the quantum wells.
Journal ArticleDOI
Influence of indium content and carrier density on spontaneous emission spectra of wurtzite InGaN/GaN quantum wires with screening effects
Seoung-Hwan Park,Woo-Pyo Hong +1 more
TL;DR: In this paper , the InGaN/GaN quantum wires with screening effects are investigated as a function of an In content and a carrier density, and the screening potentials rapidly increase with increasing carrier density.
References
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Journal ArticleDOI
Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.