Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Formation Mechanism of a Large Schottky Barrier Height for Cr-AlGaN/GaN Heterostructure
TL;DR: In this paper, the formation mechanism of large Schottky barrier height (SBH) of nonalloyed CrSchottky contacts on strained Al025Ga075N/GaN based on the currentvoltage (I-V) and capacitance-voltage data, the SBHs were determined to be 198 and 207 eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively possible formation mechanism for large SBH was described in terms of the formation of Cr-O chemical bonding at the interface between Cr and Al
Proceedings ArticleDOI
Piezoelectrically Induced Polarization and Charge in InN-Based Heterostructures
TL;DR: Theoretical analysis and calculation of polarization, piezoelectric field and sheet charge density of InN-based heterostructures have been studied as a function of lattice mismatch induced strain this article.
Proceedings ArticleDOI
Self-consistent study of strained wurtzite GaN quantum-well lasers
Wang,Jeon,Kim,Littlejohn +3 more
TL;DR: In this article, the photon rate-equation formalism is used to evaluate the multi-mode photon density, the output lasing power, and the modulation frequency response in pseudomorphically-strained wurtzite GaN quantum-well lasers.
Proceedings ArticleDOI
Optical properties of type-II InGaN/GaAsN/GaN quantum wells light-emitting diodes
TL;DR: In this paper, the spontaneous emission spectra of type-II InGaN/GaNAs QW light-emitting diodes were investigated using the multiband effective mass theory.
Journal ArticleDOI
Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells
Bernhard Georg Enders,Fabio Mitsuo Lima,Antonio Luciano de Almeida Fonseca,O. A. C. Nunes,E. F. da Silva +4 more
TL;DR: In this article, the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented.
References
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Journal ArticleDOI
Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.