Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
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Two-dimensional electron and hole gases in InxGa1−xN/AlyGa1−yN/GaN heterostructure for enhancement mode operation
Junda Yan,Xiaoliang Wang,Quan Wang,Shenqi Qu,Hongling Xiao,Enchao Peng,He Kang,Cuimei Wang,Chun Feng,Haibo Yin,Jiang Lijuan,Li Baiquan,Zhanguo Wang,Xun Hou +13 more
TL;DR: In this article, a numerical study of In x Ga1 − x N/Al y Ga 1 − y N/GaN heterostructure is presented, where the dependence of 2DEG and 2DHG sheet densities on variables, such as In X Ga 1−x N layer thickness and In content, and Al y Ga1−y N barrier layer thickness, Al content and Al content, are systematically investigated.
Journal ArticleDOI
Pressure-induced piezoelectric effects in near-lattice-matched GaN/AlInN quantum wells
TL;DR: In this article, near-lattice-matched GaN/AlInN multiple quantum wells (MQWs) are investigated by means of the diamond anvil cell high-pressure technique.
Journal ArticleDOI
Polarization Field Determination in AlGaN/GaN HFETs
TL;DR: In this article, a self-consistent solution of the Schrodinger and Poisson equations with the proper boundary conditions was analyzed by using a selfconsistent fitting parameter for the total polarization coefficient.
Journal ArticleDOI
Binding energies and photoionization cross-sections of donor and acceptor impurities in inverted core/shell ellipsoidal quantum dots: Effects of magnetic field, ellipsoid anisotropy and impurity position
Lei Shi,Zu-Wei Yan +1 more
TL;DR: Within the framework of the effective mass approximation and by using a variational and perturbation approach, the binding energies and photoionization cross-sections of donor and acceptor impuriti...
Journal ArticleDOI
Optical Properties of Zinc-Blende InGaN/GaN Quantum Well Structures and Comparison with Experiment
Park Seoung-Hwan,Lee Yong-Tak +1 more
TL;DR: In this article, the optical properties of zinc-blende InGaN/GaN QW structures were investigated using multiband effective mass theory, and the transition wavelength values at 300 K ranged from 440 to 570 nm in the investigated range.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.