Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Impurity bound polaron in wurtzite GaN/AlN quantum wells: The interface optical-phonon and the built-in electric field effects
TL;DR: In this paper, the ionization energy of a bound polaron in wurtzite GaN/AlN strained quantum wells was investigated theoretically by means of a modified Lee-Low-Pines variational approach.
Dissertation
Structure, morphology, optical and electrochemical properties of indium- and aluminum-based nitride thin films deposited by plasma-assisted reactive evaporation / Mahdi Alizadeh Kouzeh Rash
Kouzeh Rash,Mahdi Alizadeh +1 more
TL;DR: In this paper, a plasma assisted reactive evaporation system was developed for the growth of indium and aluminum-based nitride thin films, and the effects of the most influential growth parameters were investigated with respect to the structure, elemental composition, morphology and optical properties of these films.
Journal ArticleDOI
Intersubband absorption at λ∼1.3 μm in optimized GaN/AlGaN Bragg-confined structures
TL;DR: In this article, a method is developed for the analysis and extraction of the optimal structural parameters of GaN/AlGaN Bragg-confined structures, in order to maximize the intersubband absorption on bound-above-the-barrier transitions at wavelengths in the near infrared spectral range.
Journal ArticleDOI
Offsets and Polarization at Strained AlN/GaN Polar Interfaces
TL;DR: In this article, the authors present a first-principles calculation of valence band offsets, interface dipoles, strain-induced piezoelectric fields, relaxed geometric structure, and formation energies, and confirm the existence of a large forward-backward asymmetry for this interface.
Journal ArticleDOI
Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures
TL;DR: In this article, the authors investigated the influence of temperatures on parameters, including polarization, electron mobility, thermal conductivity and conduction band discontinuity at the interface between AlGaN and GaN.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.