Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells
Hongtao Jiang,Jasprit Singh +1 more
TL;DR: In this paper, the authors examined the implications of high built-in electric fields in InGaN/GaN quantum wells on the absorption spectra and refractive index changes induced by an external perpendicular electric field.
Journal ArticleDOI
Defects and Reliability of GaN‐Based LEDs: Review and Perspectives
Matteo Buffolo,Alessandro Caria,F. Piva,Nicola Roccato,C. Casu,Carlo De Santi,Nicola Trivellin,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini +9 more
TL;DR: In this paper , the main factors and mechanisms that limit the reliability of gallium nitride (GaN)-based light-emitting diodes (LEDs) are reviewed.
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009)
TL;DR: Yang et al. as discussed by the authors proposed a method to solve the problem of Chinese Academia in semicond key lab semicond mat sci beijing 100083 peoples of china, China.
Journal ArticleDOI
Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model
TL;DR: In this paper, the temperature dependence of Ni/Au Schottky contacts on AlGaN/GaN heterostructures was investigated by means of forward currentvoltage (I-V) measurements, while capacitance-voltage measurements were used to determine the properties of the two dimensional electron gas.
Journal ArticleDOI
Electronic band parameters for zinc-blende Al1−xGaxN
TL;DR: In this paper, band discontinuities for heterointerfaces between strained Al1 −xGaxN and relaxed Al1−yGayN were calculated using the empirical pseudopotential method.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.