Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy
TL;DR: In this article, multiple quantum wells (MQWs) were grown by rf plasma-assisted molecular beam epitaxy and high-resolution transmission electron microscope and x-ray diffraction measurements were performed.
Journal ArticleDOI
Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN
TL;DR: In this paper, the electronic properties of wideband-gap semiconductorGaN employing DFT-LDA calculations using a FP-LAPW code were analyzed in great detail.
Journal ArticleDOI
High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes
TL;DR: In this article, the spontaneous emission properties of an asymmetrically graded 480 nm InGaN/GaN quantum well were investigated via k⋅p theory, and the results showed that the spontaneous rates of the graded QW are three times larger than the rectangular case under various carrier densities.
Journal ArticleDOI
Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
Xiaoqing Xu,Xianglin Liu,Yan Guo,Jun Wang,Huaping Song,Shaoyan Yang,Hongyuan Wei,Qinsheng Zhu,Zhanguo Wang +8 more
TL;DR: In this paper, the influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of XPS.
Journal ArticleDOI
Pyroelectric and Piezoelectric Properties of Gan-Based Materials
TL;DR: In this paper, pyroelectric and piezoelectric properties of GaN-based materials have been studied in two different regimes: (i) uniform sample heating regime and (ii) under applied temperature gradient along the sample.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.