Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.
Journal ArticleDOI
Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy
TL;DR: In this article, the authors evaluated the valence band offsets of metal-organic vapor phase epitaxy (MOPE) heterostructures using x-ray photoelectron spectroscopy (XPS).
Journal ArticleDOI
A thermal model for static current characteristics of AlGaN∕GaN high electron mobility transistors including self-heating effect
TL;DR: In this article, a thermal model of AlGaN∕GaN high electron mobility transistors (HEMTs) has been developed based on a quasi-two-dimensional numerical solution of Schrodinger's equation coupled with Poisson's equation.
Journal ArticleDOI
Electron mobility in InN and III-N alloys
TL;DR: In this article, the electron mobilities in InN and its III-nitride alloys were calculated using a variational procedure and taking into account the standard scattering mechanisms of Coulomb scattering, alloy disorder, and optical and acoustic phonons.
Journal ArticleDOI
Mg‐doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements
Joel W. Ager,N. Miller,N. Miller,R. E. Jones,R. E. Jones,Kin Man Yu,Junqiao Wu,Junqiao Wu,William J. Schaff,Wladek Walukiewicz +9 more
TL;DR: In this paper, Mg acceptors can be compensated by irradiation-induced native donors, which leads to preferential formation of native donor defects, resulting in excess electron concentration in the bulk and at interfaces.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.