Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Surface roughness scattering in two dimensional electron gas channel
TL;DR: In this article, the mobility of AlxGa1−xN/GaN heterostructure two dimensional electron gas channel limited by surface roughness scattering was calculated considering the strong spontaneous and piezoelectric polarizations in III-group nitride heterostructures.
Journal ArticleDOI
Generation of coherent acoustic phonons in strained GaN thin films
Yue-Kai Huang,Gia-Wei Chern,Chi-Kuang Sun,Y. Smorchkova,Stacia Keller,Umesh K. Mishra,Steven P. DenBaars +6 more
TL;DR: In this article, coherent acoustic phonon oscillations were generated and studied in strained GaN thin films, where the longitudinal interference of an ultraviolet femtosecond pump pulse created periodic carrier distribution.
Journal ArticleDOI
Simulation of N-face InGaN-based p-i-n solar cells
Jih-Yuan Chang,Yen-Kuang Kuo +1 more
TL;DR: In contrast to the detrimental effect of normal polarization, the internal electric field induced by reversed polarization enhances the efficiency of carrier collection by enlarging the energy band tilting to the favorable direction in the InGaN absorption layer as discussed by the authors.
Journal ArticleDOI
Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well
TL;DR: In this paper, a selfconsistent solution of conduction band profile and subband energies for AlxGa1-xN-GaN quantum well is presented by solving the Schrodinger and Poisson equations.
Journal ArticleDOI
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm
Xiaogai Li,Suresh Sundaram,Pierre Disseix,G. Le Gac,Sophie Bouchoule,Gilles Patriarche,François Réveret,Joël Leymarie,Y. El Gmili,Tarik Moudakir,Frédéric Genty,J.P. Salvestrini,Russell D. Dupuis,Paul L. Voss,Abdallah Ougazzaden +14 more
TL;DR: In this paper, the growth of Al0.57Ga0.43N/Al0.42N buffer on AlN template by Metal Organic Vapor Phase Epitaxy was reported.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.