Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 μm wavelengths
TL;DR: In this article, a criterion for strain balancing of wurtzite group-III nitride-based multilayer heterostructures is presented, where single and double strain-balanced GaN/AlGaN quantum well structures are considered with regard to their potential application in optoelectronic devices working at communication wavelengths.
Journal ArticleDOI
Valence band offset of wurtzite InN/AlN heterojunction determined by photoelectron spectroscopy
TL;DR: In this article, the valence band offset at the wurtzite-type, nitrogen-polarity InN∕AlN(0001¯) heterojunction has been determined by photoelectron spectroscopy to be 3.10±0.04eV.
Journal ArticleDOI
Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
P. F. Zhang,X. L. Liu,Rq Q. Zhang,H. B. Fan,H. P. Song,H.Y. Wei,Cm M. Jiao,S. Y. Yang,Q. S. Zhu,Zg G. Wang +9 more
TL;DR: In this article, the authors measured the valence band offset of MgO/InN heterojunction by x-ray photoelectron spectroscopy and determined it to be 1.59 +/- 0.23 eV.
Journal ArticleDOI
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
Tyler A. Growden,Weidong Zhang,Elliott R. Brown,David F. Storm,David J. Meyer,Paul R. Berger +5 more
TL;DR: Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diodes at room temperature in contrast to traditional GaN light emitters, p-type doping and p-contacts are completely avoided.
Journal ArticleDOI
Conduction band offset at the InN∕GaN heterojunction
TL;DR: In this article, the conduction-band offset between GaN and InN is experimentally determined by combining electrical transport, capacitance-voltage, and photocurrent spectroscopy measurement results.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.