Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
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Journal ArticleDOI
Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory
Yi-Chia Tsai,Can Bayram +1 more
TL;DR: The band gap of ternary III-nitrides does not linearly depend on alloy compositions, implying a nonlinear dependence of band offsets on compositions, and the large bowing of the conduction band offset is identified and ascribed to the cation-like behavior of theConduction band minimum, while the linear dependence of the valence band offset on compositions is attributed to the anion-like character of theValence band maximum.
Journal ArticleDOI
Ultrafast carrier relaxation in GaN, In 0.05 Ga 0.95 N , and an In 0.07 Ga 0.93 N / In 0.12 Ga 0.88 N multiple quantum well
Ümit Özgür,Henry O. Everitt +1 more
TL;DR: In this article, the authors investigated the carrier relaxation dynamics as a function of the pump's excitation wavelength and intensity, and found that a sub-picosecond relaxation due to carrier redistribution and QW capture depend sensitively on the wavelength of pump excitation, while a slower relaxation of up to 1 ns for GaN and InGaN epilayers and 660 ps for the multiple QW sample, indicates carrier recombination through spontaneous emission.
Journal ArticleDOI
Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes
TL;DR: In this article, the authors investigated the electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN and GaN quantum-well (QW) light-emitting diodes using multiband effective mass theory.
Journal ArticleDOI
Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes
TL;DR: In this paper, the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-inGaN were evaluated using capacitance voltages.
Journal ArticleDOI
Linewidth enhancement factor of wurtzite GaN/AlGaN quantum-well lasers with spontaneous polarization and piezoelectric effects
TL;DR: In this paper, spontaneous and piezoelectric polarization effects on the linewidth enhancement factor αe of (0001)-oriented wurtzite (WZ) GaN/AlGaN quantum-well (QW) lasers are investigated using a many-body self-consistent (MB-SC) model.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.