Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Determination of the piezoelectric field in InGaN quantum wells
I.H. Brown,Iestyn Pope,Peter Michael Smowton,Peter Blood,J.D. Thomson,W.W. Chow,David P. Bour,Michael Kneissl +7 more
TL;DR: In this article, the authors measured the strength of the internal field of InGaN p-i-n structures, using reverse bias photocurrent absorption spectroscopy and fitting the bias dependent peak energy using microscopic theory based on the screened Hartree-Fock approximation.
Journal ArticleDOI
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
TL;DR: In this article, X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface.
Journal ArticleDOI
Electromechanical phenomena in semiconductor nanostructures
TL;DR: A review of the recent developments in the field of nanostructures and some of the still open questions can be found in this paper, where the authors focus on the effects of nonlinear piezoelectric and pyroelectric effects in semiconductors.
Journal ArticleDOI
Growth and optical properties of GaN/AlN quantum wells
Christoph Adelmann,E. Sarigiannidou,D. Jalabert,Yuji Hori,Jean-Luc Rouvière,Bruno Daudin,S. Fanget,Catherine Bru-Chevallier,Tomohiko Shibata,Masaaki Tanaka +9 more
TL;DR: In this paper, the growth of GaN/AlN quantum-well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga was demonstrated.
Journal ArticleDOI
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Daming Huang,Paolo Visconti,K. M. Jones,Michael A. Reshchikov,Feng Yun,A. A. Baski,T. King,Hadis Morkoç +7 more
TL;DR: In this article, the polarity of GaN films grown using GaN and AlN buffer layers on sapphire substrates by molecular beam epitaxy were investigated by atomic force microscopy, hot wet chemical etching, and reflection high-energy electron diffraction.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.