Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities
Huijie Li,Xianglin Liu,Wang Jianxia,Dong-Dong Jin,Heng Zhang,Shaoyan Yang,Shu-Man Liu,Wei Mao,Yue Hao,Qinsheng Zhu,Zhanguo Wang +10 more
TL;DR: In this paper, the discrepancies in measured valence band offsets (VBOs) of wurtzite III-nitride and II-oxide heterojunctions with different crystal polarities are investigated.
Journal ArticleDOI
Crystal field splitting and spontaneous polarization in InP crystal phase quantum dots
Martyna Patera,M. Zielinski +1 more
Journal ArticleDOI
Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III–V nitride quantum wells
Shou-Pu Wan,Jian-Bai Xia +1 more
TL;DR: In this article, the authors studied the effect of spontaneous and piezoelectric polarizations on the excitonic states and optical properties of AlxGa1-xN/GaN quantum wells.
Journal ArticleDOI
Growth Structure, and Optical Properties of III-Nitride Quantum Dots
TL;DR: In this article, the authors focused on III-Nitride based quantum dots covering their production and optical properties, as well as reporting on the GaN quantum dots produced by molecular beam epitaxy utilizing standard, ripening, metal spray followed by nitridation methods.
Dissertation
Growth and Characterization of Graphene on Texture-Controlled Platinum Films
TL;DR: In this paper, the authors propose a method to solve the problem of homonymity in homonym identification, i.e., homonym-of-individuals-with-relationship.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.