Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Asymmetric interface band alignments of Cu2O/ZnO and ZnO/Cu2O heterojunctions
TL;DR: In this paper, a significant forward-backward asymmetry was observed in the band alignments of Cu2O/ZnO and ZnO/Cu2O heterojunctions.
Journal ArticleDOI
Enhanced CO2 reduction capability in an AlGaN/GaN photoelectrode
Satoshi Yotsuhashi,Masahiro Deguchi,Hiroshi Hashiba,Yuji Zenitani,Reiko Hinogami,Yuka Yamada,Kazuhiro Ohkawa +6 more
TL;DR: In this paper, an AlGaN/GaN device with an unintentionally doped photoabsorption layer and an n+-GaN electrical-conduction layer was shown to improve the production rate of formic acid by CO2 conversion.
Journal ArticleDOI
Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
Q. Chen,R. Gaska,M. Asif Khan,Michael Shur,A. T. Ping,Ilesanmi Adesida,Jinwook Burm,William J. Schaff,L.F. Eastman +8 more
TL;DR: In this article, the authors report the DC and microwave performance of a 0.25 /spl mu/m gate doped channel Al/sub 0.86/N/GaN HFETs exhibiting a cutoff frequency of 37.5 GHz and a maximum frequency of oscillations of 80.4 GHz.
Journal ArticleDOI
AlN and GaN epitaxial heterojunctions on 6H–SiC(0001): Valence band offsets and polarization fields
TL;DR: In this paper, a self-consistent tight-binding approach which is able to describe polarization fields, dielectric screening, and free carrier screening is applied for a more consistent theoretical discussion of the experimental data.
Journal ArticleDOI
Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm
TL;DR: In this paper, the optical absorption coefficients and refractive index changes between the ground and the first excited states in double GaN/AlxGa(1−x)N quantum wells are studied theoretically.
References
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Journal ArticleDOI
Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.