Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
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Journal ArticleDOI
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
Yuanjie Lv,Zhaojun Lin,Timothy D. Corrigan,Jianzhi Zhao,Zhifang Cao,Lingguo Meng,Chongbiao Luan,Zhanguo Wang,Hong Chen +8 more
TL;DR: In this paper, the Ni Schottky barrier height at zero bias has been calculated by self-consistently solving Schrodinger's and Poisson's equations, and the correlation expression between the barrier height in zero electric field and the barrier heights in zero bias was derived.
Journal ArticleDOI
Piezo-Phototronic Effect in a Quantum Well Structure.
Xin Huang,Chunhua Du,Yongli Zhou,Chunyan Jiang,Xiong Pu,Wei Liu,Weiguo Hu,Hong Chen,Zhong Lin Wang,Zhong Lin Wang +9 more
TL;DR: In this study, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics and its validity and universality are well-proven.
Proceedings ArticleDOI
Simulation and optimization of 420-nm InGaN/GaN laser diodes
TL;DR: In this paper, the performance of nitride Fabry-Perot laser diodes grown on sapphire is analyzed using self-consistent laser simulation, where the active region contains three 4 nm InGaN quantum wells.
Journal ArticleDOI
Deep traps in high resistivity AlGaN films
TL;DR: In this article, the authors studied high resistivity Al x Ga 1−x N films grown by metal organic chemical vapor deposition on sapphire strong temperature quenching of photocurrent was observed and explained by the presence of hole traps with energies ranging from 2 to 036 eV for AlGaN compositions in the range 005 x
Journal ArticleDOI
Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures
Seoung-Hwan Park,Doyeol Ahn +1 more
TL;DR: In this paper, the authors compared the optical and electrical properties of (112¯2)-oriented wurtzite (WU) InGaN∕GaN quantum well (QW) structures using multiband effective mass theory.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.