Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures
TL;DR: In this article, the authors simulated the variation of the optical gain in the InGaN/GaN quantum well after thermal annealing and found that the maximum optical gain can be obtained at a diffusion length of 0.4 nm of In and Ga atoms.
Proceedings ArticleDOI
InN-on-Si heteroepitaxy: growth, optical properties, and applications
TL;DR: In this article, the authors showed that high-quality InN/AlN heterostructures can be formed on Si(111) due to the existence of "magic" ratios between the lattice constants of comprising material pairs: 2:1 (Si:Si 3 N 4 ), 5:4 (AlN/Si), and 8:9 (InN:AlN).
Journal ArticleDOI
Parameter-dependent third-order susceptibility of InxGa1−x N/GaN parabolic quantum dots
TL;DR: In this paper, the Schrodinger equation was applied to the electron states of wurtzite InxGa1−xN/GaN strained quantum dots (QDs) in the effective mass approximation.
Journal ArticleDOI
A III-nitride Layered Barrier Structure for Hyperspectral Imaging Applications
TL;DR: In this article, a novel photodetector structure based on III-nitride materials is proposed, where a layered configuration is used to create a barrier with voltage-tunable height.
Journal ArticleDOI
Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers
A.D. Andreev,Eoin P. O'Reilly +1 more
TL;DR: In this article, a theoretical analysis of the gain characteristics of InGaN/AlGaN quantum dot (QD) lasers is presented, where the elastic strain distribution caused by the lattice mismatch between the QD and the barrier is calculated using an original method which takes into account the hexagonal symmetry of the structure's elastic properties.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.