Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Analysis of Optical Gain of Strained Wurtzite InxGa1-xN/GaN Quantum Well Lasers
TL;DR: In this paper, the authors derived the effective-mass parameters of GaN and InN derived using the empirical pseudo-probability method and obtained the transparent current density for a single QW to be 200 A/cm2.
Journal ArticleDOI
First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices
TL;DR: In this article , the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of 2D hole gas (2DHG) in AlN/GaN superlattices was studied.
Proceedings ArticleDOI
Structural dependencies of many-body optical gain with piezoelectric field effects in wurtzite GaN/AlGaN quantum well lasers
TL;DR: In this article, the authors investigated the many-body optical gain with piezoelectric field effects in wurtzite GaN/Al,Gai_N quantum-well lasers as a function of compressive strain and well thickness.
Proceedings ArticleDOI
Energy characteristics of excitons in InGaN/GaN heterostructures
S. O. Usov,A. F. Tsatsul'nikov,W. V. Lundin,A. V. Sakharov,E. E. Zavarin,M. A. Sinitsyn,N. N. Ledentsov +6 more
TL;DR: In this paper, the structure and optical properties of the heterostructures, which contain an ultra-thin InGaN layers with GaN barriers, grown by MOCVD method were investigated by photoluminescence and high resolution X-ray Diffraction (HRXRD) tehnigue.
Dissertation
A tight-binding analysis of the electronic properties of III-nitride semiconductors
TL;DR: In this paper, an analytic model for the polarisation of a onedimensional linear chain of atoms was developed, which is underpinned by the tight-binding model and the Berry phase theory of electronic polarisation.
References
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Journal ArticleDOI
Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.