Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Dissertation
Internal field effects in InGaN quantum wells
TL;DR: In this article, a theoretical method based on the Pade model and comparison made with experimental results is used to interpret the results from reverse bias photocurrent absorption measurements of an In0.9N quantum well structure, a value of-1.9 MVcm-1 for the internal field has been determined, which is within 5 % of the field of -1.8 MV cm-1 calculated using piezoelectric constants interpolated from the binaries.
Proceedings ArticleDOI
The Impact of AlN Spacer on Forward Gate Current and Stress-Induced Leakage Current (SILC) of GaN HEMT
Chung-hsu Chen,Dave Wang,Daniel Hou,Yuefei Yang,Wing Yau,Robert Sadler,William Sutton,JeoungChill Shim,Shiguang Wang +8 more
TL;DR: In this article, the authors used the Tsu-Esaki tunneling model with transfer matrix approach to investigate the leakage current of GaN HEMT forward gate with an AlN spacer.
Journal ArticleDOI
Universal alignment of surface and bulk oxygen levels in semiconductors
TL;DR: In this article, it was shown that the surface Fermi level of semiconductors with physisorbed O2 lies universally at approximately −5.1ÕeV below the vacuum level.
Journal ArticleDOI
Confinement-dependent exciton binding energy in wurtzite GaN/Al x In 1-x N quantum dots
TL;DR: In this article, the exciton binding energy for wurtzite (WZ) GaN/AlxIn1−xN quantum dots with piezoelectric (PZ) and spontaneous (SP) polarizations was investigated by using an effective mass theory.
Book ChapterDOI
Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes
TL;DR: In this article, GaN/AlN resonant tunneling diodes were successfully demonstrated, and they could function well under the flux of very high current densities (e.g., ∼431 kA/cm2) without thermal breakdown.
References
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Journal ArticleDOI
Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.