Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Optical Properties of Strained AlGaN and GaInN on GaN
TL;DR: In this paper, the composition of alloys in strained ternary alloy layers, Alx Ga1-x N (0
Journal ArticleDOI
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN.
TL;DR: Band gaps and band alignments for AlN, GaN, InN, and InGaN alloys are investigated using density functional theory and it is found that relative alignments are less sensitive to the choice of XC functional.
Journal ArticleDOI
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
TL;DR: In this article, the role of the sample structure geometry on the electric field is exemplified by changing the thickness of the AlGaN barriers in multiple-QW structures and electrostatic arguments well account for the overall trends of the electric-field variations.
Journal ArticleDOI
GaN based transistors for high power applications
TL;DR: In this paper, the maximum density of the two-dimensional electron gas at the GaN/AlGaN heterointerface or in GaN and AlGaN quantum well structures can exceed 2×1013 cm−2, which is more than an order of magnitude higher than for traditional GaAs/alGaAs heterostructures.
Journal ArticleDOI
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
TL;DR: In this paper, the influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.