Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Effect of band-offset ratio on analysis of violet–blue InGaN laser characteristics
TL;DR: In this paper, the violet-blue InGaN quantum-well laser with an emission wavelength of 400-480 nm was studied and the relationship between the threshold current and the number of quantum wells was investigated.
Journal ArticleDOI
Optimization of resonant second- and third-order nonlinearities in step and continuously graded semiconductor quantum wells
TL;DR: In this article, methods for systematic optimization of step-graded and continuously graded ternary alloy based quantum wells (QW's), in respect to second- or third-order intersubband nonlinear susceptibilities at resonance, are discussed.
Journal ArticleDOI
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
H. P. Song,A. L. Yang,H.Y. Wei,Yan Guo,Baohan Zhang,Gaolin Zheng,S. Y. Yang,X. L. Liu,Q. S. Zhu,Z.G. Wang,Tieying Yang,Hui Wang +11 more
TL;DR: In this paper, the valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy.
Journal ArticleDOI
Optical properties of type-II InGaN/GaAsN/GaN quantum wells
TL;DR: In this article, the optical properties of type-II InGaN/GaNAs QW light-emitting diodes were investigated by using the multiband effective mass theory.
Journal ArticleDOI
A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure
Jiyuan Zheng,Lai Wang,Di Yang,Jiadong Yu,Xiao Meng,Yanxiong E,Chao Wu,Zhibiao Hao,Changzheng Sun,Bing Xiong,Yi Luo,Yan-jian Han,Jian Wang,Hongtao Li,Julien Brault,Samuel Matta,Mohamed Al Khalfioui,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang +20 more
TL;DR: In this paper, a GaN/AlN periodically-stacked-structure (PSS) APD with high gain without breakdown was demonstrated. And the stable gain can be determined by the periodicity of the GaN-AlN PSS.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.