Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
TL;DR: In this paper, the authors used X-ray photoelectron spectroscopy to measure the valence band offset (VBO) of the ZnO/SrTiO3 heterojunction.
Journal ArticleDOI
The In compositional gradation effect on photoluminescence in InGaN/GaN multi-quantum-well structures
TL;DR: In this article, various shapes of InGaN/GaN multi-quantum-well structures were grown by metal-organic chemical vapour deposition in order to investigate the compositional gradation effect on photoluminescence in the vicinity of the active quantum well region.
Journal ArticleDOI
The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
Wei Liu,Kie Leong Teo,Ming-Fu Li,Soo Jin Chua,Kazuo Uchida,Hiroki Tokunaga,Nakao Akutsu,Koh Matsumoto +7 more
TL;DR: In this paper, a large electric field was found in wurztite GaN/InGaN/AlGaN multilayer structures using photovoltaic spectroscopy and contactless electroreflectance spectra.
Journal ArticleDOI
Properties of native point defects in In1?xAlxN alloys
R. E. Jones,R. E. Jones,S. X. Li,S. X. Li,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Eugene E. Haller,Wladek Walukiewicz,Hai Lu,William J. Schaff +10 more
TL;DR: In this paper, the effects of localized point defects on the electrical and optical properties of In-rich InAlN alloys were studied using 2?MeV He+ irradiation to vary the defect concentration.
Journal ArticleDOI
Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
Zhiwei Li,Biao Zhang,Jun Wang,Jianming Liu,Xianglin Liu,Shaoyan Yang,Qinsheng Zhu,Zhanguo Wang +7 more
TL;DR: The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3, indicating the heterojunction has a type-I band alignment.
References
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Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.