Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TLDR
In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.Abstract:
The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward asymmetry was observed in the InN/GaN–GaN/InN and InN/AlN–AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN.read more
Citations
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Journal ArticleDOI
Spontaneous emission rate of green strain‐compensated InGaN/InGaN LEDs using InGaN substrate
TL;DR: In this article, the optical properties of strain-compensated InGaN/InGaN quantum well (QW) structures using a GaN substrate were investigated using the multiband effective mass theory.
Journal ArticleDOI
Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN/GaN heterojunction : Measurement of intrinsic band lineup
TL;DR: In this article, an in situ sample cleavage technique is adopted to reveal the cross-sectional, nonpolar a-plane face of InN∕GaN heterojunction grown on Si(111) along the polar −c axis with fully relaxed lattice structure, eliminating the polarization effects associated with the interface charge/dipole normal to the cleaved surface.
Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures This review covers the physics, epitaxial growth, fabrication, and characterization of optoelectronic devices for use in video players and other consumer electronics as well as in commercial systems.
Daniel Hofstetter,Esther Baumann,Fabrizio R. Giorgetta,Ricardo Théron,Hong Wu,William J. Schaff,Jahan M. Dawlaty,Paul A. George,Lester F. Eastman,Farhan Rana,P. K. Kandaswamy,Fabien Guillot,Eva Monroy +12 more
TL;DR: The physics, epitaxial growth, fabrication, and characterization of optoelectronic devices based on intersubband transitions in the AlN/GaN material system, as well as optically pumped light emitters, are reported on.
Journal ArticleDOI
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III-nitrides, III-oxides, and two-dimensional materials
Nasir Alfaraj,Jung-Wook Min,Chun Hong Kang,Abdullah A. Alatawi,Davide Priante,Ram Chandra Subedi,Malleswararao Tangi,Tien Khee Ng,Boon S. Ooi +8 more
TL;DR: In this paper, the authors provide an overview of aluminum nitride, sapphire, and gallium oxide as platforms for deep-ultraviolet optoelectronic devices, in which they criticize the status of sarspphire as a platform for efficient deep UV devices and detail advancements in device growth and fabrication.
Journal ArticleDOI
Photodetectors based on intersubband transitions using III-nitride superlattice structures.
Daniel Hofstetter,Esther Baumann,Fabrizio R. Giorgetta,Ricardo Théron,Hong Wu,William J. Schaff,Jahan M. Dawlaty,Paul A. George,Lester F. Eastman,Farhan Rana,P. K. Kandaswamy,Sylvain Leconte,Eva Monroy +12 more
TL;DR: The recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures is reviewed.
References
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Journal ArticleDOI
Heterojunction band discontinuities
TL;DR: In this article, the conduction band edge discontinuity ΔEc = 0.56 eV at n−CdS/p−InP junctions is reported, and the performance of this discontinuity and others are compared with photoemission data and with Van Vechten's extension of these data to many tetrahedrally coordinated semiconductors.