scispace - formally typeset
Search or ask a question
Institution

Hewlett-Packard

CompanyPalo Alto, California, United States
About: Hewlett-Packard is a company organization based out in Palo Alto, California, United States. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 34663 authors who have published 59808 publications receiving 1467218 citations. The organization is also known as: Hewlett Packard & Hewlett-Packard Company.


Papers
More filters
Proceedings ArticleDOI
J. S. Walther1
18 May 1971
TL;DR: This paper describes a single unified algorithm for the calculation of elementary functions including multiplication, division, sin, cos, tan, arctan, sinh, cosh, tanh, arCTanh, In, exp and square-root.
Abstract: This paper describes a single unified algorithm for the calculation of elementary functions including multiplication, division, sin, cos, tan, arctan, sinh, cosh, tanh, arctanh, In, exp and square-root The basis for the algorithm is coordinate rotation in a linear, circular, or hyperbolic coordinate system depending on which function is to be calculated The only operations required are shifting, adding, subtracting and the recall of prestored constants The limited domain of convergence of the algorithm is calculated, leading to a discussion of the modifications required to extend the domain for floating point calculations

1,044 citations

Journal ArticleDOI
16 Aug 1996-Science
TL;DR: In this article, a brief review of device principles and applications requirements and focus on the understanding of reliability issues is provided, focusing on the reliability issues that govern the lifetime of a flat panel display.
Abstract: Electroluminescence from organic materials has the potential to enable low-cost, full-color flat-panel displays, as well as other emissive products. Some materials have now demonstrated adequate efficiencies (1 to 15 lumens/watt) and lifetimes (>5000 hours) for practical use; however, the factors that govern lifetime remain poorly understood. This article provides a brief review of device principles and applications requirements and focuses on the understanding of reliability issues.

1,033 citations

Journal ArticleDOI
16 Aug 1998
TL;DR: A previously unrecognized connection between Golay complementary sequences and second-order Reed-Muller codes over alphabets Z/sub 2/h is found to give an efficient decoding algorithm involving multiple fast Hadamard transforms.
Abstract: We present a range of coding schemes for OFDM transmission using binary, quaternary, octary, and higher order modulation that give high code rates for moderate numbers of carriers. These schemes have tightly bounded peak-to-mean envelope power ratio (PMEPR) and simultaneously have good error correction capability. The key theoretical result is a previously unrecognized connection between Golay complementary sequences and second-order Reed-Muller codes over alphabets Z/sub 2/h. We obtain additional flexibility in trading off code rate, PMEPR, and error correction capability by partitioning the second-order Reed-Muller code into cosets such that codewords with large values of PMEPR are isolated. For all the proposed schemes we show that encoding is straightforward and give an efficient decoding algorithm involving multiple fast Hadamard transforms. Since the coding schemes are all based on the same formal generator matrix we can deal adaptively with varying channel constraints and evolving system requirements.

1,030 citations

Patent
12 Mar 2004
TL;DR: In this paper, a semiconductor device can include a channel including a first binary oxide and a second binary oxide, and the channel can be split into two binary oxide channels, each having a different voltage.
Abstract: A semiconductor device can include a channel including a first binary oxide and a second binary oxide.

1,029 citations

Patent
10 Oct 2006
TL;DR: In this paper, a thin-film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer.
Abstract: A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.

1,026 citations


Authors

Showing all 34676 results

NameH-indexPapersCitations
Andrew White1491494113874
Stephen R. Forrest1481041111816
Rafi Ahmed14663393190
Leonidas J. Guibas12469179200
Chenming Hu119129657264
Robert E. Tarjan11440067305
Hong-Jiang Zhang11246149068
Ching-Ping Wong106112842835
Guillermo Sapiro10466770128
James R. Heath10342558548
Arun Majumdar10245952464
Luca Benini101145347862
R. Stanley Williams10060546448
David M. Blei98378111547
Wei-Ying Ma9746440914
Network Information
Related Institutions (5)
IBM
253.9K papers, 7.4M citations

94% related

Samsung
163.6K papers, 2M citations

90% related

Carnegie Mellon University
104.3K papers, 5.9M citations

90% related

Microsoft
86.9K papers, 4.1M citations

90% related

Bell Labs
59.8K papers, 3.1M citations

89% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202223
2021240
20201,028
20191,269
2018964