Institution
Hewlett-Packard
Company•Palo Alto, California, United States•
About: Hewlett-Packard is a company organization based out in Palo Alto, California, United States. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 34663 authors who have published 59808 publications receiving 1467218 citations. The organization is also known as: Hewlett Packard & Hewlett-Packard Company.
Papers published on a yearly basis
Papers
More filters
••
18 May 1971TL;DR: This paper describes a single unified algorithm for the calculation of elementary functions including multiplication, division, sin, cos, tan, arctan, sinh, cosh, tanh, arCTanh, In, exp and square-root.
Abstract: This paper describes a single unified algorithm for the calculation of elementary functions including multiplication, division, sin, cos, tan, arctan, sinh, cosh, tanh, arctanh, In, exp and square-root The basis for the algorithm is coordinate rotation in a linear, circular, or hyperbolic coordinate system depending on which function is to be calculated The only operations required are shifting, adding, subtracting and the recall of prestored constants The limited domain of convergence of the algorithm is calculated, leading to a discussion of the modifications required to extend the domain for floating point calculations
1,044 citations
••
TL;DR: In this article, a brief review of device principles and applications requirements and focus on the understanding of reliability issues is provided, focusing on the reliability issues that govern the lifetime of a flat panel display.
Abstract: Electroluminescence from organic materials has the potential to enable low-cost, full-color flat-panel displays, as well as other emissive products. Some materials have now demonstrated adequate efficiencies (1 to 15 lumens/watt) and lifetimes (>5000 hours) for practical use; however, the factors that govern lifetime remain poorly understood. This article provides a brief review of device principles and applications requirements and focuses on the understanding of reliability issues.
1,033 citations
••
16 Aug 1998TL;DR: A previously unrecognized connection between Golay complementary sequences and second-order Reed-Muller codes over alphabets Z/sub 2/h is found to give an efficient decoding algorithm involving multiple fast Hadamard transforms.
Abstract: We present a range of coding schemes for OFDM transmission using binary, quaternary, octary, and higher order modulation that give high code rates for moderate numbers of carriers. These schemes have tightly bounded peak-to-mean envelope power ratio (PMEPR) and simultaneously have good error correction capability. The key theoretical result is a previously unrecognized connection between Golay complementary sequences and second-order Reed-Muller codes over alphabets Z/sub 2/h. We obtain additional flexibility in trading off code rate, PMEPR, and error correction capability by partitioning the second-order Reed-Muller code into cosets such that codewords with large values of PMEPR are isolated. For all the proposed schemes we show that encoding is straightforward and give an efficient decoding algorithm involving multiple fast Hadamard transforms. Since the coding schemes are all based on the same formal generator matrix we can deal adaptively with varying channel constraints and evolving system requirements.
1,030 citations
•
12 Mar 2004TL;DR: In this paper, a semiconductor device can include a channel including a first binary oxide and a second binary oxide, and the channel can be split into two binary oxide channels, each having a different voltage.
Abstract: A semiconductor device can include a channel including a first binary oxide and a second binary oxide.
1,029 citations
•
10 Oct 2006TL;DR: In this paper, a thin-film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer.
Abstract: A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.
1,026 citations
Authors
Showing all 34676 results
Name | H-index | Papers | Citations |
---|---|---|---|
Andrew White | 149 | 1494 | 113874 |
Stephen R. Forrest | 148 | 1041 | 111816 |
Rafi Ahmed | 146 | 633 | 93190 |
Leonidas J. Guibas | 124 | 691 | 79200 |
Chenming Hu | 119 | 1296 | 57264 |
Robert E. Tarjan | 114 | 400 | 67305 |
Hong-Jiang Zhang | 112 | 461 | 49068 |
Ching-Ping Wong | 106 | 1128 | 42835 |
Guillermo Sapiro | 104 | 667 | 70128 |
James R. Heath | 103 | 425 | 58548 |
Arun Majumdar | 102 | 459 | 52464 |
Luca Benini | 101 | 1453 | 47862 |
R. Stanley Williams | 100 | 605 | 46448 |
David M. Blei | 98 | 378 | 111547 |
Wei-Ying Ma | 97 | 464 | 40914 |